Hybrid Simulation of GaN-HEMTs and Microwave Circuits

The research focus is on modeling and simulation of high electron mobility transistors in the gallium nitride materials system (GaN HEMTs). GaN HEMTs are a key technology for any kind of future wireless communication systems. However, the GaN technology itself – in contrast to silicon technology – is not yet as well understood and controllable. One reason might be the intrinsic complex physics of III-V semiconductors. In the frame of the cluster it is  planned to develop and apply a hybrid simulation framework for GaN HEMTs in a realistic microwave circuit environment in order to address fundamental scientific questions relevant for technology and circuit design. The cluster is divided into two complementary topics:

  1. Development and implementation of a kinetic simulation framework for GaN HEMTs in complex lumped element circuits
  2. Investigation of the influence of variations in GaN HEMT technology on the microwave performance in order to formulate a statistical compact model reflecting the resulting uncertainty in circuit design

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