Publikationen

Q. H. Le, D. Kh. Huynh , D. Wang, Th. Kämpfe, M. Rudolph,
"'Small-Signal Modeling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology'",
accepted for publication at the Asia-Pacific Microwave Conference (APMC), 2019

E. Kaule, C. Andrei, St. Gerlich, R. Doerner, M. Rudolph,
"Limiting the Output Power of Rugged GaN LNAs",
Proc. 14th European Microwave Integrated Circuits Conference (EuMIC), pp. 240-242, 2019.
and: Proc. 49th European Microwave Conference (EuMC), 794-796, 2019

C. Andrei, M. Rudolph
"Properties of GaN LNAs for Front-End Applications"
Vortrag im Workshop WFC Towards A One-Chip Solution for GaN Front-Ends im Rahmen des IEEE MTT-S Intl. Microwave Symposiums, Boston, 2019.

T. Shivan, E. Kaule, M. Hossain, R. Doerner, T. Johansen, D. Stoppel, S. Boppel, W. Heinrich, V. Krozer and M. Rudolph,
“Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology,” International Journal of Microwave and Wireless Technologies 1–10.
doi: 10.1017/S1759078719000515

P. Luo, F. Schnieder, O. Bengtsson, V. Vadalà, A. Raffo, W. Heinrich, M. Rudolph,
"A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements." International Journal of Microwave and Wireless Technologies, vol. 11, no. 2, March 2019, pp. 121-129.
doi:10.1017/S1759078719000060

C. Nasser, P. Luo, F. Schnieder, M. Rudolph and D. Ritter,
"Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment," IEEE Trans. Electron Dev., vol. 66 , nr. 5 , May 2019,  pp. 2146 - 2150.
doi: 10.1109/TED.2019.2907484

C. Nasser, D. Ritter, M. Rudolph,
“Bias dependence of the access resistance in GaN HEMTs,”
in: 2018 22nd International Microwave and Radar Conference (MIKON), 2018, pp. 271–273.
DOI: 10.23919/MIKON.2018.8405197

P. Luo, F. Schnieder, M. Rudolph,
“Chalmers GaN HEMT charge model revisited,”
in: 2018 11th German Microwave Conference (GeMiC), 2018, pp. 164–167.
DOI: 10.23919/GEMIC.2018.8335055

P. Luo, F. Schnieder, O. Bengtsson, W. Heinrich and M. Rudolph,
"Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs,"
in: 2018 IEEE/MTT-S Intl. Microwave Symp. Dig.(IMS), 2018, pp. 728-731.
DOI: 10.1109/MWSYM.2018.8439389

M. Rudolph,
"GaN HEMTs for low-noise amplification — status and challenges", in: International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC), 20.-22.4.2017, Graz, Austria, pp. 1-4.
DOI: 10.1109/INMMIC.2017.7927327

A. Apte, U. L. Rohde, A. Poddar, M. Rudolph,
“Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator,” IEEE Microwave Mag., vol. 18, no. 4, pp. 108–123, Jun. 2017.
DOI: 10.1109/MMM.2017.2679998

M. Rudolph, C. Andrei, R. Doerner, S. Chevchenko, W. Heinrich,
"Noise in GaN HEMTs and Circuits", in: Dig 24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 201, pp. 1-4,
DOI: 10.1109/ICNF.2017.7985978

F. Bonani, M. Rudolph,
"Simulating Noise in Nonlinear Circuits", presented at IEEE MTT-S Intl. Microwave Symp. 2017, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization.

P. Luo, O. Bengtsson, M. Rudolph,
"A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements", in: IEEE MTT-S Intl. Microwave Symp. Dig., 2017, pp. 240 - 243.
DOI: 10.1109/MWSYM.2017.8059085

C. Andrei, R. Doerner, S. Chevchenko, W. Heinrich, M. Rudolph,
"On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design" in: Dig. European Microwave Integrated Circuits Conf. (EuMIC) 2017, pp. 244 - 247. 
DOI: 10.23919/EuMIC.2017.8230705

E. Kaule, R. Doerner, N. Weimann, M. Rudolph,
"Noise Modeling of Transferred-Substrate InP-DHBTs", in: Dig. IEEE COMCAS 2017, pp. 1 - 4.
DOI: 10.1109/COMCAS.2017.8244768

P. Luo, O. Bengtsson, M. Rudolph,
"Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements"accepted for publication at European Microwave Integrated Circuits Conf (EuMIC), 2016.
doi: 10.1109/EuMIC.2016.7777514

P. Luo, O. Bengtsson, M. Rudolph,
"GaN HEMT modeling based on pulsed S-parameter measurements", Industry-Academia Workshop on GaN Technology, Technion - Israel Institute of Technology,  9. August 2016.

K. Nosaeva  T. Al-Sawaf, W. John, D. Stoppel, M. Rudolph, F.-J. Schmückle, B. Janke, O. Krüger, V. Krozer, W. Heinrich, N.G. Weimann,
"Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer,"IEEE Trans. Electron Dev., vol. 63, no. 5, pp. 1846-1852, May 2016.
doi: 10.1109/TED.2016.2533669

P. Luo, O. Bengtsson, M. Rudolph,
"Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements", in: Dig. German Microwave Conference (GeMIC), 2016.
doi: 10.1109/GEMIC.2016.7461650

C. Andrei, O. Bengtsson, R. Doerner, S.A. Chevtchenko, W. Heinrich, M. Rudolph,
"Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive", in: Proc. 45th European Microwave Conference, 2015, pp. 231 - 234.
DOI: 10.1109/EuMC.2015.7345742

C. Andrei, O. Bengtsson, R. Doerner, S.A. Chevtchenko, M. Rudolph,
"Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications," in: IEEE MTT-S Intl. Microwave Symp. Dig., 2015.
DOI: 10.1109/MWSYM.2015.7166766

K. Nosaeva, N. Weimann, M. Rudolph, W. John, O. Krueger, W. Heinrich
“Thin ice: Diamond films could more than double the power output achievable with transistors in the ‘Terahertz gap’ by improving thermal management,” Electronics Letters, vol. 51, no. 13, pp. 959–959, Jun. 2015.
DOI: 10.1049/el.2015.1943

K. Nosaeva, N. Weimann, M. Rudolph, W. John, O. Krueger, W. Heinrich,
"Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer", Electronics Letters, Volume 51, Issue 13, p. 1010-1012, Jun. 2015.
DOI: 10.1049/el.2015.1135

A. Apte, A. Poddar, M. Rudolph, U.L. Rohde,
"A Novel Low Phase Noise X-Band Oscillator," IEEE Microwave Magazine, vol 16, no. 1, 2015, pp. 127 - 135.
DOI: 10.1109/MMM.2014.2367957

M. Rudolph, L. Escotte, R. Doerner,
"Modeling Nonlinear White Noise in GaN HEMT Devices", Frequenz, vol. 69, no. 1-2, pp. 47–55, Dec. 2014.
ISSN (Online) 2191-6349
ISSN (Print) 0016-1136
DOI: 10.1515/freq-2014-0121

Anisha M. Apte, V. Madhavan, Ajay K. Poddar, Ulrich L. Rohde, Matthias Rudolph
"A novel low phase noise X-band oscillator", in: Dig. IEEE Benjamin Franklin Symposium on Microwave and Antenna Sub-systems for Radar, Telecommunications, and Biomedical Applications (BenMAS), pp. 1-3, 2014
DOI: 10.1109/BenMAS.2014.7529471

Matthias Rudolph, Laurent Escotte, Ralf Doerner,
"GaN HEMT Noise Model Performance under Nonlinear Operation", in: Proc. 44th European Microwave Conference, pp. 1416-1419, und in: Proc. 9th European Microwave Integrated Circuits Conference, pp. 472-475, 2014.
DOI: 10.1109/EuMIC.2014.6997895
DOI: 10.1109/EuMC.2014.6986711

A. Rumiantsev, R. Doerner, F. Korndoerfer,
"Temperature impact on the in-situ S-parameter calibration in advanced SiGe technologies", in: Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 171 - 174, 2014.
DOI: 10.1109/BCTM.2014.6981307

A. Rumiantsev, R. Doerner,
"Method for estimating probe-dependent residual errors of wafer-level TRL calibration," in: Proc. 83rd ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2014.
DOI: 10.1109/ARFTG.2014.6899514

Tom K. Johansen, Matthias Rudolph, Thomas Jensen, Tomas Kraemer, Nils Weimann, Frank Schnieder, Viktor Krozer, Wolfgang Heinrich,
"Small- and large-signal modeling of InP HBTs in transferred-substrate technology,"
Intl. Jour. Microwave Wireless Tech., no 1, 2014, pp 1-9.
doi:10.1017/S1759078714000051

Matthias Rudolph, Ralf Doerner,
"Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices,"
in: Dig. German Microwave Conference (GeMIC), pp.1-4, 10-12 March 2014
ISBN 978-3-8007-3585-3
ieeexplore.ieee.org/stamp/stamp.jsp

Andrej Rumiantsev, Ralf Doerner,
"RF Probe Technology: History and Selected Topics,"
IEEE Microwave Magazine, vol.14, no.7, pp.46-58,
Nov.-Dec. 2013
doi: 10.1109/MMM.2013.2280241

Friedrich Lenk, Ralf Doerner, Andrej Rumiantsev,
"Sensitivity Analysis of S-Parameter Measurements Due to Calibration Standards Uncertainty,"
IEEE Transactions on Microwave Theory and Techniques, vol.61, no.10, pp.3800-3807, Oct. 2013
doi: 10.1109/TMTT.2013.2279774

Vladimir G. Guba, Aleksandr A. Savin, Olesia N. Bykova, Andrej Rumiantsev, Benjamin D. Maxson,
"An Automated Method for VNA Accuracy Verification Using the Modified Calibration Comparison Technique,"
Microwave Measurement Conference (ARFTG), 2013 82st ARFTG,  20.-21. Nov. 2013
doi: 10.1109/ARFTG-2.2013.6737366

Friedrich Lenk, Ralf Doerner, Paul Kurpas, Andrej Rumiantsev,
"Measurement uncertainties due to non-ideal calibration standards for unknown thru calibration,"
Microwave Measurement Conference (ARFTG), 2013 81st ARFTG , pp.1-4, 7 June 2013
doi: 10.1109/ARFTG.2013.6579057

A.K. Poddar, U.L. Rohde, A.M. Apte,
"How Low Can They Go?: Oscillator Phase Noise Model, Theoretical, Experimental Validation, and Phase Noise Measurements,"
IEEE Microwave Magazine, vol.14, no.6, pp.50-72,
Sept.-Oct. 2013
doi: 10.1109/MMM.2013.2269859

A.K. Poddar, U.L. Rohde, A.M. Apte,
"Getting Its Measure: Oscillator Phase Noise Measurement Techniques and Limitations,"
IEEE Microwave Magazine, vol.14, no.6, pp.73-86,
Sept.-Oct. 2013
doi: 10.1109/MMM.2013.2269860

Frank Schnieder, Matthias Rudolph,
"Thermal Coupling in AlGaN/GaN Power Transistors,"
Frequenz, Vol. 67, no. 1-2, pp. 21–26, January 2013.
DOI: 10.1515/freq-2012-0031

F. Schnieder, O. Bengtsson, F.-J. Schmückle, M. Rudolph, W. Heinrich
,
„Simulation of RF Power Distribution in a Packaged GaN Power Transistor
Using an Electro-Thermal Large-Signal Description,“
IEEE Trans. Microwave Theory Tech., vol. 61, no. 7, pp. 2603-2609, 2013.
doi: 10.1109/TMTT.2013.2261089

Matthias Rudolph, Ralf Doerner,
"Towards a Large-Signal Noise Model for GaN HEMT Devices"
in: Dig. European Microwave Integrated Circuits Conf.
(EuMIC), 2013
ieeexplore.ieee.org/stamp/stamp.jsp

T. K. Johansen, M. Rudolph, T. Jensen, T. Kraemer, N. Weimann, F. Schnieder, V. Krozer, W. Heinrich,
"Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications"
in: Dig. European Microwave Integrated Circuits Conf.
(EuMIC), 2013
ieeexplore.ieee.org/stamp/stamp.jsp

Ulrich L. Rohde, Matthias Rudolph,
RF / Microwave Circuit Design for Wireless Applications, 2nd ed.
Hoboken, NJ, USA: John Wiley & Sons, 2012.
ISBN 978-0-470-90181-6

Matthias Rudolph, Ralf Doerner, Eric Ngnintedem, Wolfgang Heinrich,
"Noise Modeling of GaN HEMT Devices"
in: Dig. European Microwave Integrated Circuits Conf (EuMIC), 2012, pp.
159-162.

Cristina Andrei, Helmut Kautge, Ralf Doerner, Olof Bengtsson, Serguei A. Chevtchenko, Wolfgang Heinrich, Matthias Rudolph
"Highly Rugged X-Band GaN Low Noise Amplifiers",
6th Space Agency – MOD Round Table Workshop on Wide Bandgap
Semiconductors and Components, ESA-ESTEC, Noordwijk, NL, 2012, P09.

Cristina Andrei, Ralf Doerner, Olof Bengtsson, Serguei A. Chevtchenko, Wolfgang Heinrich, Matthias Rudolph,
"Highly Linear X-Band GaN-Based Low-Noise Amplifier",
in: Dig. U.R.S.I. International Symposium on Signals, Systems and
Electronics (ISSSE) 2012, S10.2.
doi: 10.1109/ISSSE.2012.6374314

M. Rudolph
“Properties of GaN for Low Noise Front Ends”
IEEE MTT-S Intl. Microwave Symp. 2012,
Workshop WFE „Gallium Nitride for Low Noise Amplifier Applications“,
Juni 2012.

F. Schnieder, F.-J. Schmückle, W. Heinrich, M. Rudolph
"An Analysis of Source Connections in GaN Power Transistor Packages"
in: Proc. German Microwave Conf., 2012, pp 64-67.

F. Lenk, R. Doerner, A. Rumiantsev, M. Rudolph
„Calibration Residual Error Propagation Analysis Using Conformal Mapping“ 77th ARFTG Microwave Measurement Conference, 2011, Paper 2-4
doi: 10.1109/ARFTG77.2011.6034551

M. Rudolph, Ch. Fager, D.E. Root (eds.)

„Nonlinear Transistor Model Parameter Extraction Techniques“Cambridge: Cambridge University Press, 2011ISBN-13: 978-0521762106. M. Rudolph,
„Introduction“
in: M. Rudolph, Ch. Fager, D.E. Root (eds.),
„Nonlinear Transistor Model Parameter Extraction Techniques“
Cambridge: Cambridge University Press, 2011

J. Engelmann, F.-J. Schmückle, M. Rudolph
,
„Large and packaged Transistors“
in: M. Rudolph, Ch. Fager, D.E. Root (eds.),
„Nonlinear Transistor Model Parameter Extraction Techniques“
Cambridge: Cambridge University Press, 2011

M. Rudolph,
„Highly Robust GaN-Based Low-noise Amplifiers“
Institutskolloquium, TU Darmstadt, Fachgebiet Mikrowellentechnik, 19. Juli 2010.

Matthias Rudolph, Peter Heymann, Hermann Boss,
"Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods"
IEEE Microwave Magazine, Vol. 11 , nr. 6, pp. 110 - 121, June 2010
DOI: 10.1109/MMM.2010.937715

M. Rudolph, W. Heinrich,
„Assessment of power-transistor package models: distributed versus lumped approach“
in: Dig. European Microwave Integrated Circuits Conf (EuMIC), 2010.

Matthias Rudolph,
„Compact HBT modeling: status and challenges“,
in: IEEE MTT-S Intl. Microwave Symp. Dig. 25.-27. Mai 2010, Anaheim,
CA.DOI 10.1109/MWSYM.2010.5517597

O. Bengtsson, G. van der Bent, M. Rudolph, J. Würfl, M. van Heijningen, F.E. van Vliet,
„GaN-HEMT VSWR Ruggedness and Amplifier Protection“
Microwave Technology and Techniques Workshop 2010, 10-12 Mai 2010, ESA-ESTEC, Noordwijk, NL.

H. Mostardinha, P. M. Cabral, N. B. Carvalho, P. Kurpas, M. Rudolph, J. Würfl, J. C. Pinto, A. Barnes, F. Garat,
„GaN RF Oscillator Used in Space Applications“,
in: Proc. Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC) 2010, 26.-27. April 2010, Göteborg, Schweden, pp. 50 - 53
DOI: 10.1109/INMMIC.2010.5480142

M. Rudolph,
„Noise modeling of GaAs HBTs“
Institutskolloquium, IHP Frankfurt (Oder), 20. April 2010.

Matthias Rudolph,
„Modeling GaN Power Transistors“
in Proc. IEEE Wireless and Microwave Conf (WAMICON), 11.-12. April 2010, Melbourne Beach, FL, pp. 1-4
DOI: 10.1109/WAMICON.2010.5461846

Armin Liero, Mike Dewitz, Silvio Kühn, Nidhi Chaturvedi, Jijun Xu, Matthias Rudolph,
„On the Recovery Time of Highly Robust Low-Noise Amplifiers“,
IEEE Trans. Microwave Theory Tech., vol. 58. nr. 4, pp. 781 - 787, April 2010.
DOI: 10.1109/TMTT.2010.2041519

Cristina Andrei, Armin Liero, Richard Lossy, Wolfgang Heinrich, Matthias Rudolph,
„Highly Linear Broadband GaN-based Low-noise Amplifier“
in: Dig. German Microwave Conf., 15.-17. März 2010, pp. 36 – 38.

Jens Flucke, Frank Schnieder, Franz-Josef Schmückle, Wolfgang Heinrich, Matthias Rudolph,
„On the magnetic coupling between bondwires in power-transistor packages“
in: Dig. German Microwave Conf., 15.-17. März 2010, pp. 90 – 93.