Arbeitstitel ) Beschreibung: GeSn alloys are an interesting new class of semiconductors owing to their bandgap, tunable by varying the Sn content, and their compatibility with modern Si technology. GeSn growth [...] photoresponsivity across the telecommunication band (>1.55 µm) and an optically pumped direct bandgap GeSn laser for Sn contents of 2 and 13 %, respectively. The direct growth of GeSn on Si(001) bears
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Poster, Tuesday, 15.09.2026, 05:30 pm Abstract XPS study on β-aluminum-gallium oxide: composition, bandgap, and substrate dependence L. Schewe , J. Rehm, M-C. Kao, V. Vonk, Z. Galazka, S. Bin Anooz, A.
/fg-physik-halbleiterspektroskopie/publikationen/tagungsbeitraege/2026