Title of the dissertation:
Physics-based modeling of GaN HEMTs (working title)
III-Nitride semiconductors had shown their exceptional characteristics and capabilities even before their integration into electronic devices. Their remarkable transport and mechanical properties made them protagonists in research and development on electronics. Especially GaN, which combines high thermal conductivity with high electron mobility and high saturation velocity, plays a dominant role as the future semiconductor for extended use in high power-high frequency applications.
Several physical mechanisms are involved in the operation of a GaN-HEMT, influencing not only the transistor but also the circuit in which it operates. These mechanisms can be adequately described nowadays using solid-state physics. However, there is still the problem of how to connect the knowledge in physics with the numerical circuit simulation, a way to combine the characterization and analysis with circuit design and final application.
The aim of this research project is to bridge the gap. It focuses on the influence of variations in GaN HEMT technology on the microwave performance, in order to formulate a statistical compact model reflecting the resulting uncertainty in circuit design.
I obtained my Degree in Physics from University of Crete in 2014 and my MSc. in Photonics and Nanoelectronics in 2016 from the same University. The subject of my Master thesis was related to the development of metal-insulator-semiconductor (MIS) structures for the gate of HFET devices with InN channel. My research was focused on the investigation of devices’ electrical behaviour through various electrical characterization techniques in correlation with theoretical simulation of the MIS structure. The results of the study aided in the development of pioneering operational MISFETs with InN channel.
In May of 2018, I started my research effort on modeling of GaN HEMTs as a Doctoral Candidate of the Brandenburg University of Technology, under the supervision of Professor Matthias Rudolph.