Our research is focused on the development, fabrication and characterization of nano- and optoelectronic devices based on the group-IV semiconductors Silicon, Germanium and Tin. We also explore the use of functional oxides. We combine materials research with the development of novel device concepts with applications ranging from sensors to spintronics. One example is the use of low-dimensional semiconductor heterostructures and metallic nanostructures to develop integrated biosensors. Our field of expertise includes numerous manufacturing and characterization methods (powerful Nd: YAG laser, vapor deposition, optical microscopy, CV measuring station, Raman spectroscopy, atomic force microscopy, scanning electron microscopy).
Our InfraFEI project proposal for establishing a measurement setup to characterize IR-photodetectors in a wavelength range between 2.0 and 4.7 µm just got accepted!
Our paper on the comparison of FTIR-based absorption measurements with photocurrent measurements for Ge-on-Si photodetectors with and without plasmonic nanoantennas was published in "Journal of Applied Physics":