Publikationsliste

M. Kittler
11.07.2017
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Im Anhang unten sind zusätzlich weitere 34 Veröffentlichungen [A1 - A34] in Buchkapiteln und in Tagungsbänden aus dem Zeitraum 1973 - 1990 aufgeführt.

 2017

262“Temperature dependence of luminescence from dislocated Ge on Si substrate”
B. Schwartz, M. Reiche, M. Kittler
Materials Today: Proceedings (2017), accepted July 2017
261“Influence of strain, donor concentration, carrier confinement, and dislocation density on the efficiency of luminescence of Ge-based structures on Si substrate”
B. Schwartz, M. Reiche, M. Kittler
Phys. Status Solidi C, 1700018 (2017)
260“Luminescence of strained Ge on GeSn virtual substrate grown on Si (001)”
B. Schwartz, M. Oehme, R. Koerner, S. Bechler, J. Schulze, M. Kittler
Silicon Photonics XII, Proc. of SPIE Vol. 10108, 101080D-1 (2017)

 2016

259"Impact of Defect-Induced Strain on Device Properties"
Manfred Reiche, Martin Kittler, Eckhard Pippel, Hartmut Uebensee, Hans Kosina, Alexander Grill, Zlatan Stanojevic and Oskar Baumgartner
ADVANCED ENGINEERING MATERIALS 2016
258"Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers"
B. Schwartz, P. Saring, T. Arguirov, M. Oehme, K. Kostecki, E. Kasper, J. Schulze, M. Kittler
Solid State Phenomena, Vol. 242, pp. 361-367, 2016
257"Ge and GeSn Light Emitters on Si"
M. Oehme, M. Gollhofer, K. Kostecki, R. Koerner, S. Bechler, D. Widmann, T. Arguirov, M. Kittler, J. Schulze
Solid State Phenomena, Vol. 242, pp. 353-360, 2016
256“Electronic and Optical Properties of Dislocations in Silicon”
M. Reiche, M. Kittler
Crystals 6(7), 74 (2016)
255“Electronic properties of dislocations”
M. Reiche, M. Kittler, H. Uebensee, E. Pippel, A. Haehnel, S. Birner
Appl. Phys. A 122, 398 (2016)
254“Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction: Grain boundary light-beam induced current”
Orman Gref, Ana‐Maria Teodoreanu, Rainer Leihkauf, Heiko Lohrke, Martin Kittler, Daniel Amkreutz, Christian Boit, Felice Friedrich
Physica Status Solidi (a), Vol. 213(7) July 2016

 2015

253“Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers”
B. Schwartz, T. Arguirov,  M. Kittler, M. Oehme, K. Kostecki, E. Kasper, J. Schulze
Proc. SPIE 9367, Silicon Photonics X, 93671H (February 27, 2015) 
252“Electroluminescence of GeSn/Ge MQW LEDs on Si substrate”
B. Schwartz, M. Oehme, K. Kostecki, D. Widmann, M. Gollhofer, R. Koerner, S. Bechler, I. A. Fischer, T. Wendav, E. Kasper, J. Schulze, and  M. Kittler
Optics Letters, Vol. 40, Issue 13, pp. 3209-3212 (2015)
251“About dislocation and oxygen related luminescence of Si around 0.8 eV”
M. Kittler, T. Arguirov, M. Reiche, C. Krause and D. Mankovics
Physica Status Solidi (c), Volume 12, Issue 8,  pages 1077-1080, August 2015
250“Strain and carrier transport along dislocations”
M. Reiche, M. Kittler, E. Pippel, W. Erfurth, A. Haehnel and H. Uebensee
Physica Status Solidi (c), Volume 12, Issue 8,  pages 1071-1076, August 2015
249“Electronic Properties of Dislocations in Si”
M. Reiche, M. Kittler, E. Pippel, H. Kosina, A. Lugstein, H. Uebensee
Solid State Phenomena, Vol. 242, pp. 141-146, Oct. 2015

2014 

248“Carrier transport on dislocations in silicon”
M. Reiche, M. Kittler, H.-M. Krause, and H. Übensee
AIP Conference Proceedings 1583, 33 (2014)
247“On the electronic properties of a single dislocation”
M. Reiche, M. Kittler, W. Erfurth, E. Pippel, K. Sklarek, H. Blumtritt, A.Haehnel, and H. Uebensee
J. Appl. Phys. 115, 194303 (2014)
246“1.55 μm Light Emitter Based on Dislocation D1-Emission in Silicon”
M. Reiche, M. Kittler
Proc. Advanced Photonics for Communication, Optical Society of America: Optics and Photonics Congress, San Diego, July 13 – 16, 2014
245“GeSn/Ge multiquantum well photodetectors on Si substrates”
M. Oehme, D. Widmann, K. Kostecki, P. Zaumseil, B. Schwartz, M. Gollhofer,R. Koerner, S. Bechler, M. Kittler, E. Kasper, and J. Schulze
Optics Letters Vol. 39, No. 16, 4711 (2014)
244“Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films“
S. Steffens, C. Becker, D. Amkreutz, A. Klossek, M. Kittler, Y.-Y. Chen, A. Schnegg, M. Klingsporn, D. Abou-Ras, K. Lips, and B. Rech
Appl. Phys. Lett. 105, 022108 (2014)
243“Charge carrier transport along grain boundaries in silicon”
M. Kittler, M. Reiche, H.-M. Krause
Solid State Phenomena 205-206, 293-298 (2014)
242“Luminescence from germanium and germanium on silicon”
T. Arguirov, M. Kittler, M. Oehme, N.V. Abrosimov, O.F. Vyvenko, E. Kasper, J. Schulze
Solid State Phenomena 205-206, 383-393 (2014)
241“Properties of strong luminescence at 0.93eV in solar grade silicon”
C. Krause, T. Arguirov, W. Seifert, D. Mankovics, H.M. Krause, M. Kittler
Solid State Phenomena 205-206, 83-88 (2014)
240“GeSn Heterojunction LEDs on Si Substrates”
M. Oehme, K. Kostecki, T. Arguirov, G. Mussler, K. Ye, M. Gollhofer, M. Schmid, M. Kaschel, R. Körner, M. Kittler, D. Buca, E. Kasper, J. Schulze
IEEE Photonics Technology Letters 26, 187 (2014)
239“Trap-assisted tunneling on extended defects in tunnel field-effect transistors”
M. Reiche, M. Kittler, H. Übensee, M. Krause, E. Pippel
Jpn. J. Appl. Phys. 53, 04EC03 (2014)  
238“Dislocations as Native Nanostructures - Electronic Properties”
M. Reiche, M. Kittler, H. Uebensee, E. Pippel, S. Hopfe
Advances in Nano Research 2, 1-14 (2014)    
237“Single Dislocations as Nanostructure Devices: Physics and Applications”
M. Reiche, M. Kittler, H. Uebensee, E. Pippel, W. Erfurth
ECS Transactions 64(11), 267-281 (2014)
236“Single-Electron Transitions In One-Dimensional Native Nanostructures”
M. Reiche, M. Kittler, M. Schmelz, R. Stolz, E. Pippel, H. Uebensee, M. Kermann, T. Ortlepp
Journal of Physics: Conference Series 568, 052024 (2014) 
235“Light Induced Crystallization of an Amorphous Silicon Film Embedded Between Silicon Oxide Layers”
M. Schade, T. Mchedlidze, M. Kittler, H. S. Leipner
Physica Status Solidi B 251(2), 439-445 (2014)
234“Electroluminescence of Germanium-LEDs on Silicon”
B. Schwartz, A. Klossek, M. Kittler, M. Oehme, E. Kasper, J. Schulze
Physica Status Solidi C 11(11-12), 1686-1691 (2014)

2013 

233“Electrons on dislocations”
M. Reiche, M. Kittler, M. Krause, H. Uebensee
Phys. Stat. Sol. C 10, 40 (2013)
232“Combined Raman-DLTS investigations of n-nype Cu-In-S absorber layers grown on Cu tape substrate”
M. Trushin, T. Arguirov, M. Kittler, W. Seifert, A. Klossek, T. Bernhard, W. Gerlach-Blumenthal, A. Haensel, O. Tober, M. Schwabe
Phys. Stat. Sol. A 210, 222 (2013)
231“Energetic spectra of dislocation networks produced by hydrophilic bonding of silicon wafers”
I. Kolevatov, M. Trushin, O. Vyvenko, M. Kittler, O. Kononchuk
Phys. Stat. Sol. C 10, 20 (2013)
230“Dislocation luminescence in highly doped degenerated germanium at room temperature”
T. Arguirov, O. Vyvenko, M. Oehme, J. Schulze, M. Kittler
Phys. Stat. Sol. C 10, 56 (2013)
229“Light from germanium tin heterostructures on silicon”
E. Kasper, M. Kittler, M. Oehme, T. Arguirov
Proc. SPIE 8628, Optoelectronic Integrated Circuits XV, 86280J (March 6, 2013);doi:10.1117/12.2006594
228“Characterization of thin-film a-Si:H/μc-Si:H tandem solar cells on glass substrates”
A. Klossek, C. Krause, T. Arguirov, H.-M. Krause, W. Seifert, F. Friedrich, S. Calnan, O. Gabriel, B. Stannowski, M. Kittler
Cryst. Res. Technol., 1 8 (2013) /DOI 10.1002/crat.201200489
227“On the origin of intense luminescence at 0.93eV in multicrystalline silicon”
C. Krause, D. Mankovics, H.-M. Krause,T. Arguirov, M. Kittler
J. Appl. Phys. 114, 034902 (2013)
226“Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied by synchrotron white beam x-ray topography”
D. Oriwol, E.-R. Carl, A.N. Danilevsky, L. Sylla, W. Seifert, M. Kittler, H.S. Leipner
Acta Materialia 61, 6903 (2013)
225“Light-induced crystallization of an amorphous silicon film embedded between silicon oxide layers”
M. Schade, T. Mchedlidze, M. Kittler, H.S. Leipner
Phys. Stat. Sol. B 251 (2), 439 (2014)
224“2D simulations of the grain boundary light beam induced (GB-LBIC) technique on polycrystalline silicon thin films”
A.-M. Teodoreanu, F. Friedrich, R. Leihkauf, L. Korte, M. Kittler, B. Rech, C. Boit
Proceedings 13th EUPVSEC, paper 3DV.1.19
223“Group IV materials and properties”
M. Reiche, M. Kittlerin
Handbook of silicon photonics (eds. L. Vivien and L. Pavesi), Chapter 1.3, Taylor & Francis (2013), pp. 25 – 36
222“Trap-Assisted Carrier Transport in Nanostructures”
M. Reiche, M. Kittler, H. Übensee
Proc. 13th IEEE Intern. Conf. Nanotechnology, Beijing, China (2013) pp. 1164 – 1167
221“Dislocations as Native Nanostructures – Electronic Properties”
M. Reiche, M. Kittler, H. Uebensee, E. Pippel, S. Hopfe
Proc. 2013 World Congress on Advances in Nano, Biomechanics, Robotics, and Energy Research (ANBRE13), Seoul, Korea (2013), pp. 512 – 524
220“A Novel SOI-Based MOSFET with Ultra-Low Subthreshold Swing for Cryogenic Applications”
M. Reiche, M. Kittler, H. Uebensee, E. Pippel
Proc. 28th Symp. on Microelectronics Technology and Devices (SbMicro 2013), Curitiba, Brazil (2013)
219“1.55 μm Light Emitter Based on Dislocation D1-Emission in Silicon”
M. Kittler, M., Reiche, T. Arguirov
Proc. 28th Symp. on Microelectronics Technology and Devices (SbMicro 2013), Curitiba, Brazil (2013)
218“Trap-Assisted Tunneling on Extended Defects in Tunnel Field-Effect Transistors”
M. Reiche, M. Kittler, H. Uebensee
Ext. Abstr. of the 2013 Intern. Conf. on Solid State Devices and Materials (SSDM 2013), Fukuoka, Japan (2013), pp. 80 – 81
217“Growth Process of Microcrystalline Silicon Studied by Combined 2 Photoluminescence and Raman Investigations”
A. Klossek, D. Mankovics, T. Arguirov, M. Ratzke, S. Kirner, F. Friedrich, O. Gabriel, B. Stannowski, R. Schlatmann, M. Kittler
J. Appl. Phys. 114, 223511 (2013)
216“Germanium Tin: Silicon Photonics Towards Mid Infrared”
E. Kasper, M. Kittler, M. Oehme, T. Arguirov
Photonics Research, Vol. 1, No. 2, 69 (2013)
215“Light from Germanium Tin Heterostructures on Silicon”
E. Kasper, M. Kittler, M. Oehme, T. Arguirov
Proc. Photonics West 2013, SPIE Proceedings, 8628, 8628OJ (2013)

2012 

214“Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes”
E. Kasper, M. Oehme, T. Arguirov, J. Werner, M. Kittler, J. Schulze
Advances in OptoElectronics 212212, 916275 (2012)
213“Direct band gap luminescence from Ge pin diodes on Si substrates”
E. Kasper, M. Oehme, J. Werner, T. Arguirov, M. Kittler
Frontiers of Optoelectronics in China 5 (3), 256 (2012)
212“Distribution of defects and breakdown sites in umg-Si solar cells studied by luminescence imaging”
A. Klossek, D. Mankovics, M. Kittler
Energy Procedia 27, 143 (2012)
211“Dislocation-related photoluminescence imaging of mc-Si wafers at room temperature”
D. Mankovics, R.P. Schmid, T. Arguirov, M. Kittler
Crystal Research and Technology 47(11), 1148 (2012)
210“Luminescence of defects and breakdown sites in multicrystalline Si solar cells”
D. Mankovics, A. Klossek, Ch. Krause, T. Arguirov, W. Seifert, M. Kittler
Phys. Stat. Sol. A 209(10), 1908 (2012)
209“Capability of photoluminescence for characterization of multicrystalline silicon”
T. Mchedlidze, W. Seifert, M. Kittler, A.T. Blumenau, B. Birkmann, T. Mono, M. Müller
J. Appl. Phys. 111, 073504 (2012)
208“Investigation of defect states in heavily dislocated thin silicon films”
T. Mchedlidze, M. Kittler
J. Appl. Phys. 111, 053706 (2012)
207“Characterization of dislocation-based nanotransistors”
M. Reiche, M. Kittler
SPIE Proceedings Vol. 8549, 854929 (2012)

2011 

206“Rapid dislocation-related D1 photoluminescence imaging of multicrystalline Si wafers at room temperature”
R.P. Schmid, D. Mankovics, T. Arguirov, M. Ratzke, T. Mchedlidze, M. Kittler
Phys. Stat. Sol. (a) 208, 888 (2011)
205“Novel imaging techniques for dislocation-related D1 photoluminescence of multicrystalline Si wafers: two different approaches”
R. Schmid, D. Mankovics, T. Arguirov, T. Mchedlidze, M. Kittler
Phys. Stat. Sol. (c) 8, 1297 (2011)
204“Structural characterization of crystallized Si thin film material by HRTEM and Raman spectroscopy”
T. Mchedlidze, M. Beigmohamadi, B. Berghoff, R. Sohal, S. Suckow, T. Arguirov, N. Wilck, J. Mayer, B. Spangenberg, M. Kittler
Phys. Stat. Sol. (a) 208, 588 (2011)
203“Structures responsible for radiative and non-radiative recombination activity of dislocations in silicon”
T. Mchedlidze, T. Arguirov, O. Kononchuk, M. Trushin, M. Reiche, M. Kittler
Phys. Stat. Sol. (c) 8, 991 (2011)
202“Silicon based light emitter utilizing tunnel injection of excess carriers via MIS structure”
T. Arguirov, C. Wenger, M. Lukosius, T. Mchedlidze, M. Reiche, M. Kittler
Phys. Stat. Sol. (c) 8, 1302 (2011)
201“Characterization of crystalline silicon on glass using photoluminescence”
T. Mchedlidze, J. Schneider, T. Arguirov, M. Kittler
Phys. Stat. Sol. (c) 8, 1334 (2011)
200“Scanning probe studies of amorphous silicon subjected to laser annealing”
M. Ratzke, T. Mchedlidze, T. Arguirov, N. Acharya, M. Kittler, J. Reif
Phys. Stat. Sol. (c) 8, 1351 (2011)
199“Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes”
M. Trushin, O. Vyvenko, T. Mchedlidze, M. Reiche, M. Kittler
Phys. Stat. Sol. (c) 8, 1371 (2011)
198“Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si”
T. Arguirov, M. Kittler, M. Oehme, N.V. Abrosimov, E. Kasper, J. Schulze
Solid State Phenomena 178-179, 25 (2011)
197“Characterization of traps in crystalline silicon on glas using deep-level transient spectroscopy”
T. Mchedlidze, J.H. Zollondz, M. Kittler
Solid State Phenomena 178-179, 100 (2011)
196“Fast light-induced solid state crystallization of nanometer thick silicon layers on quartz”
T. Mchedlidze, T. Arguirov, M. Kittler
Solid State Phenomena 178-179, 110 (2011)
195“Scanning x-ray excited optical luminescence microscopy as a new tool for the analysis of recombination active defects in multicrystalline silicon”
M. Trushin, O.F. Vyvenko, W. Seifert, A. Klossek, I. Zizak, M. Kittler
Solid State Phenomena 178-179, 301 (2011)
194“Anomalous temperature behaviour of band to band electroluminescence in silicon solar cells”
A. Klossek, T. Arguirov, T. Mchedlidze, M. Kittler
Phys. Stat. Sol. (c) 8, 911 (2011)
193“Low threading dislocation density Ge deposited on Si (100) using RPCVD”
Y. Yamamoto, P. Zaumseil, T. Arguirov, M. Kittler, B. Tillack
Solid State Electronics 60, 2 (2011)
192“Room temperature luminescence from Ge”
T. Arguirov, M. Kittler, N.V. Abrosimov
Journ. of Physics: Conference Ser. 281, 012021 (2011)
191“Photoluminescence study of Ge containing crystal defects”
M. Kittler, T. Arguirov, M. Oehme, Y. Yamamoto, B. Tillack, N.V. Abrosimov
Phys. Stat. Sol. (a) 208, 754 (2011)
190“Giant Poole-Frenkel effect for the shallow dislocation-related hole traps in silicon”
M. Trushin, O. Vyvenko, V. Vdovin, M. Kittler
Journ. of Physics: Conference Ser. 281, 012009 (2011)
189“Structure and properties of dislocations in interfaces of bonded wafers”
M. Reiche, M. Kittler, R. Scholz, A. Hähnel, T. Arguirov
Journ. of Physics: Conference Ser. 281, 012017 (2011)
188“Investigations of emitter homogeneity on laser doped emitters”
S. Germershausen, L. Bartholomäus, U. Seidel, N. Hanisch, A. Schieferdecker, K.-H. Küsters, M. Kittler, M. Ametowobla, F. Einsele, G. Dallmann
Energy Procedia 8, 232 (2011)
187“Structure and properties of dislocations in silicon: properties and uses”
M. Reiche, M. Kittler
in "Crystalline Silicon - Properties and Uses" (Ed. Sukumar Basu), pp. 57-80, InTech, Rijeka, Croatia, 2011

2010

186“Optimization of the luminescence properties of silicon diodes produced by implantation and annealing”
T. Arguirov, T. Mchedlidze, M. Reiche, M. Kittler
Solid State Phenomena 156-158, 579 (2010)
185“Analysis of silicon carbide and silicon nitride precipitates in block cast multicrystalline silicon”
M. Holla, T. Arguirov, W. Seifert, M. Kittler
Solid State Phenomena 156-158, 41 (2010)
184“Defect characterization of poly-Ge and VGF-grown Ge material”
M. Holla, T. Arguirov, G. Jia, M. Kittler, Ch. Frank-Rotsch, F. Kiessling, P. Rudolph
Solid State Phenomena 156-158, 483 (2010)
183“Characterization of thin film photovoltaic material using photoluminescence and Raman spectroscopy”
T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova, M. Kittler
Solid State Phenomena 156-158, 419 (2010)
182“Determination of the origin of dislocation related luminescence from silicon using regular dislocation networks”
T. Mchedlidze, O. Kononchuk, T. Arguirov, M. Trushin, M. Reiche, M. Kittler
Solid State Phenomena 156-158, 567 (2010)
181“Light-induced solid-phase crystallization of Si nanolayers in Si/SiO2 multiple quantum wells”
T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova, M. Kittler
J. Appl. Phys. 107, 124302 (2010)
180“Dislocation-based Si nanodevices”
M. Reiche, M. Kittler, D. Buca, A. Hähnel, Qing-Tai Zhao, S. Mantl, U. Gösele
Japan. J. Appl. Phys. Pt.1 49, 04DJ02 (2010)
179“Properties of interfacial dislocations in hydrophobic bonded Si wafers”
M. Reiche, M. Kittler, A. Hähnel, T. Arguirov, T. Mchedlidze
ECS Transactions 33(4), 441 (2010)
178“Electronic states of oxygen-free dislocation networks produced by direct bonding of silicon wafers”
M. Trushin, O. Vyvenko, T. Mchedlidze, O. Kononchuk, M. Kittler
Solid State Phenomena 156-158, 283 (2010)
177“XBIC/μ-XRF/μ-XAS analysis of metals precipitation in block-cast solar silicon”
M. Trushin, W. Seifert, O. Vyvenko, J. Bauer, G. Martinez-Criado, M. Salome, M. Kittler
Nuclear Instruments and Methods in Physics Research B 268, 254 (2010)
176“Scanning X-ray excited optical luminescence microscopy of multicrystalline silicon”
O. Vyvenko, T. Arguirov, W. Seifert, I. Zizak, M. Trushin, M. Kittler
Phys. Stat. Sol. A 207, 1940 (2010)

2009

175“Synchrotron X-ray microprobe investigations of iron precipitation in multicrystalline silicon”
W. Seifert, O. Vyvenko, T. Arguirov, M. Kittler, M. Salome, M. Seibt, M. Trushin
Superlattices and Microstructures 45, 168 (2009)
174“Synchrotron microscopy and spectroscopy for analysis of crystal defects in silicon”
W. Seifert, O. Vyvenko, T. Arguirov, A. Erko, M. Kittler, C. Rudolf, M. Salome, M. Trushin, I. Zizak
Phys. Stat. Sol. (c) 6, 765 (2009)
173“Silicon Based IR Light Emitters”
M. Kittler, T. Mchedlidze, T. Arguirov, W. Seifert, M. Reiche, T. Wilhelm
Phys. Stat. Sol. (c) 6, 707 (2009)
172“Laser Annealing of the Si Layers in Si/SiO2 Multiple Quantum Wells”
T. Arguirov, T. Mchedlidze, S. Kouteva-Arguirova, M. Kittler, R. Rölver, B. Berghoff, D. Bätzner, B. Spangenberg
Materials Science and Engineering B 159-160, 57 (2009)
171“Hydrogen Transformations in Si-Based Solar Structures Studied by Precise FTIR Spectroscopy”
V.D. Akhmetov, A.G. Ulyashin, A. Holt, M. Kittler
Materials Science and Engineering B 159-160, 182 (2009)
170“Plastic deformation in 200mm silicon wafers arising from mechanical loads in vertical-type and horizontaltype furnaces”
A. Fischer, G. Kissinger, G. Ritter, V. Akhmetov, M. Kittler
Materials Science and Engineering B 159-160, 103 (2009)
169“Combined XBIC/μ-XRF/μ-XAS/DLTS investigation of chemical character and electrical properties of Cu and Ni precipitates in silicon”
M. Trushin, O. Vyvenko, W. Seifert, M. Kittler, I. Zizak, A. Erko, M. Seibt, C. Rudolf
Phys. Stat. Sol. (c) 6, 1868 (2009)
168“Electroluminescence from p-i-n structure fabricated using crystalline silicon on glass technology”
T. Mchedlidze, T. Arguirov, M. Holla, M. Kittler
J. Appl. Phys. 105, 093107 (2009)
167“Silicon Based Light Emitters Utilizing Radiation from Dislocations: Electric Field Induced Shift of the Dislocation-Related Luminescence”
T. Arguirov, T. Mchedlidze, M. Kittler, M. Reiche, T. Wilhelm, T. Hoang, J. Hollemann, J. Schmitz
Physica E 41, 907 (2009)
166“EBIC/PL investigations of dislocation network produced by silicon wafer direct bonding”
G. Jia, W. Seifert, T. Mchedlidze, T. Arguirov, M. Kittler, T. Wilhelm, M. Reiche
Superlattices and Microstructures 45, 314 (2009)
165“Correlation of Electrical and Luminescence Properties of Dislocation Networks with its Microscopic Structure”
T. Mchedlidze, T. Wilhelm, T. Arguirov, M. Trushin, M. Reiche, M. Kittler
Phys. Stat. Sol. (c) 6, 1817 (2009)
164“Iron-oxygen interaction in silicon: A combined XBIC/XRF-EBIC-DLTS study of precipitation and complex building”
M. Trushin, O. Vyvenko, W. Seifert, G. Jia, M. Kittler
Physica B: Condensed Matter 404, 4645 (2009)
163“Minority carrier conductive channel formed at a direct silicon-bonded interfacial grain boundary”
X. Yu, W. Seifert, O. Vyvenko, M. Kittler
Scripta Materialia 61, 828 (2009)
162“Dislocations as active components in novel silicon devices”
M. Kittler, M. Reiche
Advanced Engineering Materials 11, 249 (2009)

2008 

161“Light-Induced Solid-to-Solid Phase Transformation in Si Nanolayers of Si-SiO2 Multiple Quantum Wells”
T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova, M. Kittler, R. Rölver, B. Berghoff, D. L. Bätzner, and B. Spangenberg
Phys. Rev. B 77, 161304(R) (2008) 
160“Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters”
V. Kveder, M. Kittler
Materials Science Forum 590, 29 (2008)
159“Dislocations in Silicon as a Tool to be used in Optics, Electronics and Biology”
M. Kittler, M. Reiche, T. Arguirov, T. Mchedlidze, W. Seifert, O.F. Vyvenko, T. Wilhelm, X. Yu
Solid State Phenomena 131-133, 289 (2008)
158“Stark Effect at Dislocations in Silicon for Modulation of a 1.5 µm Light Emitter”
M. Kittler, M. Reiche, T. Mchedlidze, T. Arguirov, G. Jia, W. Seifert, S. Suckow, T. Wilhelm
Silicon Photonics, ed. J.A. Kubby, G.T. Reed, (Proc. of SPIE; 6898), OG1 (2008)
157“Engineering of Dislocation-Loops for Light Emission from Silicon Diodes”
T. Mchedlidze, T. Arguirov, M. Kittler, T. Hoang, J. Hollemann, P. LeMinh, J. Schmitz
Solid State Phenomena 131-133, 303 (2008)
156“Influence of Substrate, Structure and Annealing Procedures on Crystallinity and Optical Properties of Si/SiO2 Multiple Quantum Wells”
T. Mchedlidze, T. Arguirov, S. Kouteva-Arguirova, G. Jia, M. Kittler, R. Rölver, B. Berghoff, M. Först, D.L. Bätzner, and B. Spangenberg
Thin Solid Films 516, 6800 (2008)
155“Regular Dislocation Networks in Si. Part II: Luminescence”
T. Mchedlidze, T. Wilhelm, X. Yu, T. Arguirov, G. Jia, M. Reiche, M. Kittler
Solid State Phenomena 131-133, 503 (2008)
154“Regular Dislocation Networks in Si. Part I: Structure”
T. Mchedlidze, T. Wilhelm, X. Yu, T. Arguirov, M. Kittler, M. Reiche
Solid State Phenomena 131-133, 571 (2008)
153“A Pure 1.5 µm Electroluminescence from Metal-Oxide-Silicon Tunneling Diode using Dislocation Network”
X. Yu, W. Seifert, O.F. Vyvenko, M. Kittler, T. Wilhelm, M. Reiche
Appl. Phys. Lett. 93,  041108 (2008)
152“Radially Non-Uniform Interaction of Nitrogen with Silicon Wafers”
V.D. Akhmetov, G. Kissinger, A. Fischer, G. Morgenstern, G. Ritter, M. Kittler
J. Mater. Sci.: Mater. Electron. 19, 36 (2008)
151“Horizontal Versus Vertical Annealing of Silicon Wafers at High Temperatures”
G. Kissinger, A. Fischer, G. Ritter, V. Akhmetov, M. Kittler
Solid State Phenomena 131-133, 413 (2008)  150
150“EBIC and luminescence studies of defects in solar cells”
O. Breitenstein, J. Bauer, T. Arguirov, M. Kittler, W. Seifert
Scanning 30, 331 (2008)
149“Dislocation Engineering for a Silicon-Based Light Emitter at 1.5 µm”
M. Kittler, T. Arguirov, T. Mchedlidze, M. Reiche, W. Seifert, M. Trushin, T. Wilhelm, X. Yu
Proc. 5th International Symposium on Advanced Science and Technology of Silicon Materials, JSPS (2008), p. 55
148“Infrared Light Emission from Porous Silicon”
G. Jia, W. Seifert, T. Arguirov, M. Kittler
Journal of Materials Science: Materials in Electronics 19, S9 (2008)

2007 

147“Structural and Optical Properties of Si/SiO2 Multi-Quantum Wells”
T. Mchedlidze, T. Arguirov, M. Kittler, R. Roelver, B. Berghoff, M. Foerst and B. Spangenberg
Physica E 38, 152 (2007)
146“Photoluminescence Study on Defects in Multicrystalline Silicon”
T. Arguirov, G. Jia, W. Seifert, M. Kittler
Semiconductors 41, 436 (2007)
145“Cathodoluminescence Investigation of Si Nanowires Fabricated by Thermal Evaporation of SiO”
G. Jia, T. Arguirov, M. Kittler, Z. Su, D. Yang, J. Sha
Semiconductors 41, 391 (2007)
144“Regular Dislocation Networks in Silicon as a Tool for Novel Nanostructure Devices”
M. Kittler, X. Yu, T. Mchedlidze, T. Arguirov, O.F. Vyvenko, W. Seifert, M. Reiche, T. Wilhelm, M. Seibt, O. Voß, W. Fritzsche, A. Wolff
Small 3, 964 (2007)
143“Scanning Probe Studies of the Electrical Activity at Interfaces Formed by Silicon Wafer Direct Bonding”
M. Ratzke, O.F. Vyvenko, X. Yu, J. Reif, M. Kittler, M. Reiche
phys. stat. sol. (c) 4, 2893 (2007) 
142“Luminescence of Dislocations Network in Directly Bonded Silicon Wafers”
X. Yu, O.F. Vyvenko, W. Seifert, T. Arguirov, T. Wilhelm, M. Reiche
phys. stat. sol. (c) 4, 3025 (2007)
141“Combined CL/EBIC/DLTS Investigation of a Regular Dislocation Network Formed by Silicon Wafer Direct Bonding”
X. Yu, O. Vyvenko, M. Kittler, W. Seifert, T. Mchedlidze, T. Arguirov, M. Reiche
Semiconductors 41, 458 (2007)
140“Signatures of distinct structures related to rod-like defects in silicon detected by various measurement methods”
T. Mchedlidze, T. Arguirov, G. Jia, M. Kittler
phys. stat. sol. (a) 204, 2229 (2007)
139“Influence of Dislocation Loops on the Near-Infrared Light Emission from Silicon Diodes”
T. Hoang, J. Hollemann, P. LeMimnh, J. Schmitz, T. Mchedlidze, T. Arguirov, M. Kittler
IEEE Transactions on Electron Devices, 54, 1860 (2007)
138“Silicon Nanostructures for IR Light Emitters”
M. Kittler, T. Arguirov, W. Seifert, X. Yu, G. Jia, O.F. Vyvenko, T. Mchedlidze, M. Reiche, T. Wilhelm, J. Sha, D. Yang
Materials Science and Engineering C 27, 1252 (2007)
137“Enhancement of IR Emission from a Dislocation Network in Si due to an External Bias Voltage”
X. Yu, O.F. Vyvenko, M. Reiche, M. Kittler
Materials Science and Engineering C 27, 1026 (2007)
136“Effect of laser annealing on crystallinity of the Si layer in Si/SiO2 multiple quantumn wells”
T. Arguirov, T. Mchedlidze, V.D. Akhmetov, S.Kouteva-Arguirova, M. Kittler, R. Rölver, B. Berghoff, M. Först, D.L. Bätzner, B. Spangenberg
Appl. Surface Science 254, 1083 (2007)
135“Influence of Electric Field on Spectral Positions of Dislocation-related Luminescence Peaks in Silicon: Stark Effect”
T. Mchedlidze, T. Arguirov, M. Kittler, T. Hoang, J. Holleman, J. Schmitz
Appl. Phys. Lett. 91,  201113 (2007)
134“Characterization of recombination active defects in silicon using the synchrotron-based techniques XBIC, µ-XRF and µ-XAS at BESSY Berlin”
W. Seifert, O. Vyvenko, I. Zizak, A. Erko, M. Trushin, M. Kittler
Proc. 22nd European Photovoltaic Solar Energy Conference, Sept. 3.-7., 2007, Milan, Italy WIP-Renewable Energies, Munich, 2007, pp. 1719-1721

2006 

133“Self-Organized Pattern Formation of Biomolecules at Si Surfaces: Intended Application of a Dislocation Network”
M. Kittler, X. Yu, O.F. Vyvenko, M. Birkholz, W. Seifert, M. Reiche, T. Wilhelm, T. Arguirov, A. Wolff, W. Fritzsche, M. Seibt
Materials Science and Engineering C 26, 902 (2006)
132“Properties of Dislocation Networks Formed by Si Wafer Direct Bonding”
X. Yu, T. Arguirov, M. Kittler, W. Seifert, M. Ratzke, M. Reiche
Materials Science in Semiconductor Processing 9, 96 (2006)
131“Silicon-Based Light Emitters”
M. Kittler, M. Reiche, T. Arguirov, W. Seifert, X. Yu
physica status solidi (a) 203 (4), 802 (2006)
130“Involvement of Iron-Phosphorus Complexes in Iron Gettering for N-Type Silicon”
T. Mchedlize, M. Kittler
physica status solidi (a) 203 (4), 786 (2006)
129“1.5 µm luminescence of silicon nanowires fabricated by thermal evaporation of SiO”
G. Jia, M. Kittler, Z. Su, D. Yang, and J. Sha
phys. stat. sol. (a) 203, R55– R57 (2006)
128“Residual stress in Si Nanocrystals Embedded in a SiO2 Matrix”
T. Arguirov, T. Mchedlidze, M. Kittler, R. Rölver, B. Berghoff, M. Först, B. Spangenberg
Appl. Phys. Lett. 89,  053111 (2006)
127“Towards Silicon Based Light Emitters Utilising the Radiation from Dislocation Networks”
T. Arguirov, M. Kittler, W. Seifert, X. Yu
Materials Science and Engineering B 134, 109 (2006)
126“Regular Dislocation Networks in Silicon as a Tool for Novel Device Application”
M. Kittler, M. Reiche, W. Seifert, X. Yu, T. Arguirov, O.F. Vyvenko, T. Mchedlidze, T. Wilhelm
ECS Transactions 3 (4), 429 (2006) 
125“1.5 µm Emission from a Silicon MOS-LED Based on a Dislocation Network”
M. Kittler, M. Reiche, X. Yu, T. Arguirov, O.F. Vyvenko, W. Seifert, T. Mchedlidze, G. Jia, T. Wilhelm
IEDM Technical Digest (2006), pp. 845-848 
124“Dislocation-induced light emission”
M. Reiche, M. Kittler, T. Wilhelm, T. Arguirov, W. Seifert, X. Yu, T. Mtchedlidze
ECS Transactions 3 (7), 311 (2006)
123“Solar cells based upon multicrystalline Si with DLC antireflection and passivation coatings”
N. Klyui, V. Litovchenko, L. Neselevska, V. Kostylyov, A. Sarikov, N. Taraschenko, M. Kittler, W. Seifert
Ukr. J. Phys. 51, 61 (2006)
122“Light Emission by Dislocations in Silicon”
M. Reiche, M. Kittler, T. Wilhelm, T. Arguirov, W. Seifert,X. Yu
Proc. IEEE LEOS, 110 (2006)

2005 

121"Enhanced silicon band edge related radiation: origin and applicability for light emitters"
T. Arguirov, M. Kittler, W. Seifert, X. Yu
Materials Science and Engineering B 124-125, 431 (2005)
120"Potential and limitation of electron holography in Si research"
P. Formanek, M. Kittler
Solid State Phenomena 108-109, 603 (2005)
119"Silicon Based Light Emitters for On-chip Optical Interconnects"
M. Kittler, T. Arguirov, W. Seifert, X. Yu, M. Reiche
Solid State Phenomena 108-109, 749 (2005)
118"Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon"
O.F. Vyvenko, M. Kittler, W. Seifert
Solid State Phenomena 108-109, 151 (2005)
117"Dislocation Engineering for a Si-Based Light Emitter at 1.5 µm"
M. Kittler, M. Reiche, T. Arguirov, W. Seifert, X. Yu
Technical Digest IEDM, 1027 (2005)
116“Direct evidence of internal Schottky barriere sat NiSi2 precipitates in Si by electron holography”
P. Formanek, M. Kittler
J. Appl. Phys. 97, 063707 (2005)
115„Recombination activity and electrical levels of ‚clean’ and copper contaminated dislocations in p-type Si“
O.F. Vyvenko, M. Kittler, W. Seifert, M.V. Trushin
phys. stat. sol. (c) 2, 1852 (2005)
114„Silicon-based light emission“
M. Kittler. T. Arguirov, A. Fischer, W. Seifert
Optical Materials 27, 967 (2005)
113“Application of electron holography to extended defects”
P. Formanek, M. Kittler
phys. stat. sol. (c) 2, 1878 (2005)

2004 

112“Recombination activity and electrical levels of dislocations in p-type SiGe structures: Impact of copper contamination and hydrogenation”
O.F. Vyvenko, M. Kittler, W. Seifert
J. Appl. Phys. 96, 6425 (2004)
111„Aluminium gettering in photovoltaic silicon“
J. Chen, D. Yang, X. Wang, D. Que, M. Kittler
Eur. J. Appl. Phys. 27, 119 (2004)
110“Silicon-based light emission after ion implantation“
M. Kittler, T. Arguirov, W. Seifert
Photonics West, San Jose, Jan. 2004 SPIE Proc. Vol. 5357 Optoelectronic integration on silicon (2004) pp. 164-171
109“Assessing the performance of two-dimensional dopant profiling techniques”
N. Duhayon, … P. Formanek, M. Kittler et al.
J. Vac. Sci. Technol. B 22, 385 (2004)
108“Electron holography on silicon microstructures and its comparison to other microscopic techniques”
P. Formanek, M. Kittler
J. Phys.: Condens. Matter 16, S193 (2004)
107„Estimation of the upper limit of the minority-carrier diffusion length in multicrystalline silicon: Limitation of the action of gettering and passivation on dislocations“
M. Kittler, W. Seifert
Solid State Phenomena, Vols. 95-96, 197 (2004)
106„Luminescence of crystal defects formed after annealing of phosphorus implanted silicon“
T. Arguirov, M. Kittler,  W. Seifert, D. Bolze, K.-E. Ehwald, P. Formanek, J. Reif
Solid State Phenomena, Vols. 95-96, 289 (2004)
105„Process-induced changes of the properties of silicon oxide layers containing carbon: A study of a low-k material to be used in the interconnection system“
V. Akhmetov, M. Kittler, W. Seifert, S. Marschmeyer, H.H. Richter, P. Formanek, J. Dörschel
Solid State Phenomena, Vols. 95-96, 647 (2004)

2003

104„Influence of contamination on the dislocation-related deep level C1 line observed in DLTS of n-type Si: A comparison with the technique of EBIC“
K. Knobloch, M. Kittler, W. Seifert
J. Appl. Phys. 93, 1069 (2003)
103 “Influence of contamination on the electrical activity of crystal defects in Si”
M. Kittler, W. Seifert, and K. Knobloch
Microelectronic Engineering 66, 281 (2003)

2002 

102“Temperature behaviour of photoluminescence and electron-beam-induced current recombination behaviour of extended defects in solar grade silicon”
T. Arguirov, W. Seifert, M. Kittler, and J. Reif
J. Phys.: Condens. Matter 14, 13169 (2002)
101“Analysis of local electrical properties of grain boundaries in Si by electron-beam-induced-current techniques”
S. Pandelov, W. Seifert, M. Kittler, and J. Reif
J. Phys.: Condens. Matter 14 , 13161 (2002)
100“Application of synchrotron radiation based X-ray microprobe techniques for the analysis of recombination activity of metals precipitated at Si/SiGe misfit  dislocations”
O.F. Vyvenko, T. Buonassisi, A..A.. Istratov, E.R. Weber, M. Kittler, W. Seifert
J. Phys.: Condens. Matter 14 , 13079 (2002)
  99“Crystalline Silicon for Solar Cells”
M. Kittler and W. Koch
Solid State Phenomena Vols. 82-84, 695 (2002)
  98O.F. Vyvenko, T. Buonassisi, A.A. Istratov, E.R. Weber, M. Kittler, W. Seifert
Proc. 12th Workshop on Crystalline Si Solar Cell Materials and Processes Ed. B.L. Sopori, Colorado/USA, August 2002, NREL/BK-520-32717, p. 111
  97N. Klyui, V.G. Litovchenko, A.G. Roshin, V.N. Dikusha, M. Kittler, W. Seifert
Solar Energy Materials and Solar Cells 72, 597 (2002)
  96“Room-temperature luminescence and EBIC recombination behaviour of crystal defects in mc-Si”
M. Kittler, W. Seifert, T. Arguirov, I. Tarasov, S. Ostapenko
Solar Energy Materials & Solar Cells Vol. 72, 465 (2002)
  95M. Kittler, O. Krüger und W. Seifert Freiberger Forschungshefte B 321, 166 (2002)
  94W. Seifert, O. Krüger, M. Kittler und V. Higgs
Freiberger Forschungshefte B 321, 161 (2002)

2001 

  93"Defect diagnostics in mc-Si using scanning techniques"
I. Tarasov, S. Ostapenko, W. Seifert, M. Kittler, J.P. Kalejs
Physica B 308, 1133 (2001)
  92"Electrical behaviour of crystal defects in Si: Influence of a contamination"
M. Kittler, W. Seifert, V. Kveder
Proc. 11th workshop on crystalline Si solar cell materials and processes, Ed. B.L. Sopori, NREL, Estes Park, Colorado, 2001, p. 32
  91"Temperature-dependent cross-sectional EBIC study of hydrogen passivation of defects in mc-Si"
O.F. Vyvenko, O. Krüger, M. Kittler
Proc. 11th workshop on crystalline Si solar cell materials and processes, Ed. B.L. Sopori, NREL, Estes Park, Colorado, 2001, p. 240
  90"Room-temperature mapping of defects in mc-Si wafers and solar cells"
I. Tarasov, S. Lulu, S. Ostapenko, W. Seifert, M. Kittler, J.P. Kalejs
Proc. 11th workshop on crystalline Si solar cell materials and processes, Ed. B.L. Sopori, NREL, Estes Park, Colorado, 2001, p. 264
  89"Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behaviour"
V. Kveder, M. Kittler, W. Schröter
Phys. Rev. B 63, 115208 (2001)
  88“Electrical Behaviour of Crystal Defects in Silicon Solar Cells”
M. Kittler, W. Seifert, O. Krüger
Solid State Phenomena Vols. 78-79, 39 (2001)
  87“Depth Profiling of the Recombination Activity of Defects Measured by  Temperature-Dependent Cross-Sectional EBIC”
O. Vyvenko, O. Krüger, M. Kittler
Solid State Phenomena Vols. 78-79, 65 (2001)
  86“Modeling the Influence of Dislocation on Minority Carrier Diffusion Length in Silicon as a Function of Dislocation Contamination”
W. Seifert, M. Kittler
Solid State Phenomena Vols. 78-79, 253 (2001)

2000

  85"Extension of hydrogen passivation of intragrain defects and grain boundaries in cast multicrystalline silicon"
(dedicated to Wolfgang Schröter) O. Krüger, W. Seifert, M. Kittler, O.F. Vyvenko
physica status solidi (b) 222, 367 (2000)
  84"Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment"
O.F. Vyvenko, O. Krüger, M. Kittler
Appl. Phys. Lett. 76, 697 (2000)

1999 

  83"A spectro-microscopic approach to study the morphology and elemental distribution of mc-Si surfaces"
P. Hoffmann, R.P. Mikalo, D. Schmeisser, M. Kittler
phys. stat. sol. (b) 215, 743 (1999)
  82"Temperature dependence of the recombination activity at contaminated dislocations in Si: A model describing the different EBIC contrast behaviour"
M. Kittler, V. V. Kveder, W. Schröter
Solid State Phenomena 69-70, 417 (1999)
  81"Interaction of crystal defects with p-n junctions in multicrystalline Si solar cells"
O. Krüger, M. Kittler, C. Hässler, W. Koch
Solid State Phenomena 69-70, 173 (1999)
  80"High quality, relaxed SiGe epitaxial layers for solar cell application"
K. Said, J. Poortmans, M. Caymax, R. Loo, A. Daami, G. Bremond, O. Krüger, M. Kittler
Thin Solid Films 337, 85 (1999)
  79"Electrical properties of SiGe layers grown by LPE and CVD"
O. Krüger, W. Seifert, M. Kittler, A. Gutjahr, I. Sillier, M. Konuma, K. Said, M. Caymax, J. Poortmans
IEEE Semiconducting and Insulating Materials Conference (SIMC-X) IEEE Inc., pp. 185-189 (1999)

1998 

  78"Evaluation of p-n junction position and channel length in Si devices with resolution of few nanometers by low-energy EBIC"
M. Kittler, J. Lärz
Solid-State Phenomena 63-64, 77 (1998)
  77"Inline analysis of defects in microelectronic fabrication by optical and scanning electron microscopical techniques"
C. Morilla, M. Kittler
Solid-State Phenomena 63-64, 457 (1998)
  76"Electrical properties of SiGe epitaxial layers for photovoltaic application as studied by scanning electron microscopical methods"
O. Krüger, W. Seifert, M. Kittler, A. Gutjahr, M. Konuma, K. Said, J. Poortmans
Solid-State Phenomena 63-64, 509 (1998)
  75"Impact of phosphorus diffusion on the contamination level of dislocations in deformed FZ silicon"
K. Knobloch, M. Kittler, W. Seifert, J. J. Simon, I. Perichaud
Solid-State Phenomena 63-64, 105 (1998)
  74"SiGe thin-film structures for solar cells"
G. Bremond, A. Daami, A. Laugier, W. Seifert, M. Kittler, J. Poortmans, K. Said, M. Caymax, M. Konuma, A. Gutjahr, I. Silier
MRS Symposia Proc. Vol. 485, 43 (1998)

1997 

  73A.A. Istratov, H. Hieslmair, T. Heiser, C. Flink, E.R. Weber, W. Seifert, M. Kittler
Proc. 7th workshop on the role of impurities and defects in Si device processing Ed. B.L. Sopori, NREL, Copper Mountain, Colorado 1997, p. 158
  72"Modification of the recombination activity of dislocations in silicon by hydrogenation, phosphorus diffusion and heat treatments“
W. Seifert, K. Knobloch, M. Kittler
Solid State Phenomena 57-58, 287 (1997)
  71"Low-temperature passivation for SiGe alloy solar cells“
K. Said, J. Poortmanns, M. Libezny, W. Laureys, M. Caymax, J. Nijs, R. Mertens, C. Vinckier, D. Vyncke, W. Seifert, M. Kittler , M. Konuma, I. Silier, A. Gutjahr
Proc. 14th European PV Conference, Barcelona, (Spain), p. 986, 30 June - 4 July, 1997 

1996 

  70"Recombination activity of oxygen related defects in Si"
W. Seifert, M. Kittler, J. Vanhellemont, E. Simoen, C. Claeys, F. G. Kirscht
Inst. Phys. Conf. Series 149, 319 (1996)
  69"Contrastive recombination behavior of materials silicide and oxygen precipitates in n-type silicon: attempt at an explanation"
W. Seifert, M. Kittler, M. Seibt, A. Buczkowski
Solid State Phenomena 47 & 48, 365 (1996)
  68"EBIC study of recombination activity of oxygen precipitation related defects in Si"
W. Seifert, M. Kittler, J. Vanhellemont
Materials Science and Engineering B 42, 260 (1996)
  67"A study of the interaction of electron beam generated excess charge-carriers with a  Si/SiGe/Si heterostructure"
B. Sieber, M. Kittler, A. Miri, J. Lärz
Materials Science and Engineering B 42, 243 (1996)
  66"Scanning deep level transient spectroscopy measurements of  extended defects  in silicon"
K. Knobloch, M. Kittler, W. Seifert, V. Higgs
Solid State Phenomena 51 & 52, 63 (1996)
  65"Application of  scanning deep level transient spectroscopy for characterization of multicrystalline Si"
K. Knobloch, W. Seifert, M. Kittler
Materials Science and Engineering B 42, 254 (1996)
  64"EBIC defect characterization: state of  understanding and problems of interpretation"
M. Kittler, W. Seifert
Materials Science and Engineering B 42, 8 (1996)

1995 

  63"Influence of Cu contamination and hydrogenation on recombination activity of misfit dislocations in SiGe/Si epilayers"
M. Kittler, C. Ulhaq-Bouillet, V. Higgs
Mat. Sci. Forum, Vols. 196 - 201, 383 (1995)
  62"Analysis of the recombination-active region around extended defects in Si"
M. Kittler, W. Seifert
Mat. Sci. Forum, Vols. 196 - 201, 1123 (1995)
  61"A reflection  upon the applicability of EBIC as a sensitive microanalytical technique (ppb range) for Si materials research"
M. Kittler, W. Seifert
Scanning Microscopy 9, 677 (1995)
  60"Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers temperature dependence of activity as a marker characterizing the contamination level"
M. Kittler, C. Ulhaq-Bouillet, V. Higgs
J. Appl. Phys. 78, 4573 (1995)
  59"Modification of recombination activity of dislocations in Si and SiGe by contamination and hydrogenation"
M. Kittler, W. Seifert, V. Higgs
MRS Symp. Proc. 378, 989 (1995)
  58"Analysis of the recombination activity of NiSi2 platelets in Si"
(dedicated to Johannes Heydenreich) M. Kittler, W. Seifert
phys. stat. sol. (a) 150, 463 (1995)
  57"Interaction of iron with a grain boundary in boron-doped multicrystalline silicon"
M. Kittler, W. Seifert, M. Stemmer, J. Palm
J. Appl. Phys. 77, 3725 (1995)

1994 

  56"Charakterisierung von FZ-gezogenen SiGe-Kristallen bezüglich Ge-Verteilung und elektrischer Eigenschaften"
W. Seifert, M. Kittler, J. Wollweber, D. Schulz
DVM-Tagung "Rastermikroskopie in der Materialprüfung", Dresden, April 1994, S.  329 - 334
  55"Influence of Cu contamination on radiative and non-radiative recombination of misfit dislocations in SiGe/Si structures"
M. Kittler, C. Ulhaq-Bouillet, V. Higgs
Proc. ICEM 13 - Paris, July 1994, p. 1137
  54"Heat treatment  induced surface morphology of buried SiGe layers on (001) Si"
I. Babanskaya, K. Höppner, M. Kittler, C. Ulhaq-Bouillet
Proc. ICEM 13 - Paris, July 1994, p. 647
  53"SEM and TEM X-Ray microanalysis of SiGe/Si heterostructures"
A. Armigliato, M. Kittler, D. Gavoni, J. Lärz
Proc. ICEM 13 - Paris, July 1994, p. 659
  52"Influence of subthreshold ultrasound treatment on recombination properties of dislocations in GeSi-Si heterostructures"
I. A. Buyanova, A. V. Savchuk, M. K. Sheinkman, M. Kittler
Semicond. Sci. Technol. 9, 2042 (1994)
  51"Influence of hydrogen on the electrical and optical activity of misfit dislocations in Si/SiGe epilayers"
V. Higgs, M. Kittler
Appl. Phys. Lett. 65, 2805 (1994)
  50"Two types of EBIC behaviour of 60° dislocations in Si: experimental observations and modelling"
M. Kittler, W. Seifert
Mater. Sci. Eng. B 54, 78 (1994)
  49"Recombination activity of 'clean' and contaminated misfit discolations in Si(Ge) structures"
M. Kittler, C. Ulhaq-Bouillet, V. Higgs
Mater. Sci. Eng. B  54, 52 (1994)
  48"Analytical, structural and electrical characterization of SiGe layers by electron micro beam techniques"
M. Kittler, J. Lärz
Mikrochimica Acta, 114 /115, 327 (1994)

1993 

  47"Detection of threading dislocations by EBIC in a SiGe epilayer with graded buffer"
M. Kittler, C. Ulhaq-Bouillet, J. Hersener, F. Schäffler
Solid State Phenomena 32 & 33, 559 (1993)
  46"On the origin of recombination activity of extended defects in Silicon as studied by the EBIC method"
M. Kittler, W. Seifert
Inst. Phys. Conf. Ser. 134, 717 (1993)
  45"Simulation of EBIC contrast with account of a realistic generation function and nonzero width of collecting Schottky junction"
W. Seifert, W. Knechtel, M. Kittler
Inst. Phys. Conf. Ser. 134, 751 (1993)
  44"Investigation of recombination at misfit dislocations in SiGe CVD-structures by 1 : 1 correlation of EBIC and CL"
V. Higgs, M. Kittler
Inst. Phys. Conf. Ser. 134, 703 (1993)
  43"Two classes of defect recombination behaviour in silicon as studied by SEM-EBIC"
M. Kittler, W. Seifert
Scanning, 15, 316 (1993)
  42"Influence of dislocation density on recombination at grain boundaries in multicrystalline silicon"
W. Seifert, G. Morgenstern, M. Kittler
Semicond. Sci. Technol. 8, 1687 (1993)
  41"Investigation of the recombination activity of misfit dislocations in Si/SiGe epilayers by Cathodoluminescence imaging and Electron Beam Induced Current technique"
V. Higgs, M. Kittler
Appl. Phys. Lett. 63, 2085 (1993)
  40"On origin of EBIC defects contrast in Si: a reflection on injection- and temperature-dependent investigations"
M. Kittler, W. Seifert
phys. stat. sol. (a) 138, 687 (1993)
  39"Recombination activity of misfit dislocations in silicon"
(dedicated to Helmut Alexander) M. Kittler, W. Seifert, V. Higgs
phys. stat. sol. 137, 327 (1993)
  38"Investigations of the recombination at NiSi2 particles and at misfit dislocations in Ni contaminated n-type Si by the technique of the Electron Beam Induced Current"
M. Kittler, W. Seifert, Z. J. Radzimski
Appl. Phys. Lett. 62, 2513 (1993)
  37"Annealing induced changes of recombination in cast polycrystalline silicon"
M. Kittler, W. Seifert, G. Morgenstern
J. of Electrochem. Soc. 140, 563 (1993)

1992 

  36"Influence of rapid thermal annealing on recombination properties of polycrystalline Si"
M. Kittler, W. Seifert
MRS-Symp. Proc. 262, 969 (1992)
  35"On origin of EBIC contrast of extended defects in Si"
M. Kittler, W. Seifert
Scanning Microscopy 6, 979 (1992)

1991 

  34"Characterization of polycrystalline silicon by EBIC"
M. Kittler, J. Lärz, G. Morgenstern, W. Seifert
J. de Physique IV, 1, C6, 173 (1991)
  33"Electrical properties of defects in multicrystalline silicon"
M. Kittler, J. Lärz, G. Morgenstern, W. Seifert
Solid State Phenomena 19 & 20, 373 (1991)
  32"Bright EBIC contrast of crystal defects in silicon"
M. Kittler, W. Seifert
Springer Proc. in Physics 54, 96 (1991)
  31"Recombination properties of structurally well defined NiSi2 precipitates in silicon"
M. Kittler, J. Lärz, W. Seifert, M. Seibt, W. Schröter
Appl. Phys. Lett. 58, 911 (1991)

1989 

  30"EBIC Studies of gettering in silicon"
M. Kittler Proc. IC-STDCS, Ed. K. Sumino
Vol. I, Yokohama/Japan, Sept. 1989 North Holland, pp. 1511 - 1522
  29"On the formation of bright EBIC contrast at crystal defects"
H. Blumtritt, M. Kittler, W. Seifert
Inst. Phys. Conf. Ser. 104, 233 (1989)
  28"Minority-carrier diffusion length: measurements by EBIC, connection to materials microstructure and relation to device performance "
M. Kittler, W. Seifert
Rev. de Phys. Appliquee 24, C6-31 (1989)
  27"Charge collection microscopy in gettering and defect engineering"
M. Kittler
Solid State Phenomena 6 & 7, 367 (1989)
  26"On the investigation of dopant boundaries in silicon device structures by means of SEM-EBIC"
W. Hoppe, M. Kittler
Crystal Res. Technol. 24, 65 (1989)

1988 

  25"A new technique for the determination of minority-carrier diffusion length by EBIC"
M. Kittler, W. Seifert, H. Raith
Scanning 11, 24 (1988)
  24"Contribution of densely distributed EBIC contrasts in annealed Cz silicon to bulk recombination"
M. Kittler, W. Seifert
Scanning Microscopy 2, 1397 (1988)
  23"EBIC investigations of thick SOI layers"
M. Kittler, B. Tillack, W. Hoppe, W. Seifert, R. Banisch, H. H. Richter, A. Rocher
Revue Physique Appliquee 23, 281 (1988)
  22"Depth profiling of the minority-carrier diffusion length in intrinsically gettered silicon by electron-beam-induced current"
C. Donolato, M. Kittler
J. Appl. Phys. 63, 1569 (1988)

1987 

  21"Influence of Intrinsic Gettering on Silicon Recombination Properties and their Relation to Device Performance"
M. Kittler, H. Richter, W. Seifert
Proc. 17th ESSDERC, Bologna (1987), p. 343 - 346
  20„Problemy interpretazii EBIC-izmereniji na kremnii"
M. Kittler, W. Seifert, H. Richter
Izv. AN SSSR, Serija Fizicheskaya 51, 155 (1987)
  19W. Seifert, M. Kittler Proc. 7th  Int. School "Defects in Crystals"
Szczyrk 1985 World Scientific Publ., Singapore (1987), Ed. E. Mizera, p. 139
  18“On the intrinsic gettering in Fe-contaminated Cz-Si”
K. Schmalz, F.-G. Kirscht, S. Niese, H. Richter, M. Kittler, W. Seifert, I. Babanskaja, H. Klose, K. Tittelbach-Helmrich, J. Schöneich
phys. stat. sol. (a) 100, 69 (1987)
  17“Characterization of the leakage-current diffusion component in intrinsically gettered silicon by EBIC”
M. Kittler, W. Seifert
phys. stat. sol. (a) 99, 559 (1987)
  16“Negative (bright) EBIC contrast at oxygen induced defects in silicon”
W. Seifert, M. Kittler
phys. stat. sol. (a) 99, K11 (1987)

1986 

  15“Comparison of EBIC and DLTS Measurements on Boron-Doped CZ Silicon Contaminated with Iron”
M. Kittler, W. Seifert, K. Schmalz, K. Tittelbach-Helmrich
phys. stat. sol. (a) 96, K133 (1986)
  14“Temperature-Dependent EBIC Diffusion-Length Measurements in Silicon”
M. Kittler, W. Seifert, K.-W. Schröder
phys. stat. sol. (a) 93, K101 (1986)

1985 

  13“Problems and results of diffusion length investigations by energy-dependent EBIC measurements”
M. Kittler, W. Seifert, K.-W. Schröder, E. Susi
Crystal Res. Technol., 20, 1435 (1985)
  12“On the Intrinsic Gettering in Cu-Contaminated Cz-Si”
K. Schmalz, F.-G. Kirscht, S. Niese, I. Babanskaja, M. Kittler,  H. Richter, J. Schöneich, W. Seifert
phys. stat. sol. (a) 89, 389 (1985)
  11“Influence of chlorine implantation on phosphorus diffusivity and oxidation-induced defects in silicon”
A. Armigliato, S. Solmi, C. Donolato, P. Negrini, E. Gabilli, A. Garulli, M. Kittler
phys. stat. sol. (a) 87, 207 (1985)

1984 

  10“On the gettering efficiency of crystal defects in silicon”
E. Bugiel, M. Kittler, A. Borchardt, H. Richter
phys. stat. sol. (a) 84, 143 (1984)
    9“Quantitative EBIC Investigations on Bulk Stacking Faults in Silicon”
M. Kittler, K.-W. Schröder, E. Bugiel, C. Becker
phys. stat. sol. (a) 81, K131  (1984)

1983 

    8“The influence of gas-phase etch removal, deposition temperature and substrate properties on the crystallographic perfection of silicon epitaxial layers”
F. Richter, G. Weidner, A. Borchardt, E. Bugiel, M. Kittler, K. Schmalz, M. Weidner, H. Rausch
Crystal Res. Technol. 18, 1521 (1983)
    7“Characterization of dislocations and their effects in silicon device technology”
M. Kittler, W. Seifert, E. Bugiel, H. Richter
J. Physique 44, C4-437 (1983)
    6“Determination of Semiconductor Parameters and of the Vertical Structure of Devices by Numerical Analysis of Energy-Dependent EBIC Measurements”
M. Kittler, K.-W. Schröder
phys. stat. sol. (a) 77, 139 (1983)

1982 

    5“EBIC/TEM Studies on the Relation between Electrical Properties, Crystallographic Structure, and Interaction with Point Defects of Epitaxial Stacking Faults in Silicon”
M. Kittler, E. Bugiel
Crystal Res. Technol. 17, 79 (1982)

1981 

    4“On the sensitivity of the EBIC technique as applied to defect investigations in silicon”
M. Kittler, W. Seifert
phys. stat. sol. (a) 66, 573 (1981)
    3„On the characterization of individual defects in silicon by EBIC“
M. Kittler, W. Seifert
Crystal Res. Technol. 16, 157 (1981)

1980 

    2“On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM-EBIC (II). Contrast due to defects”
M. Kittler
Kristall und Technik 15, 575 (1980)
    1“On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM-EBIC (I). Fundamentals and contrast due to macroscopical inhomogeneities”
M. Kittler
Kristall und Technik 15, 185 (1980)

ANHANG

Veröffentlichungen in Buchkapiteln und Tagungsbänden (DDR, CSSR, UdSSR),
Zeitraum 1973 - 1990

Mikrosonde 

Vorträge II. Arbeitstagung "Mikrosonde", 4.-7.4.1973 in Berlin
[A1]O. Brümmer, W. Beier, M. Kittler „Abbildung magnetischer Domänen mit der Mikrosonde“, S. 320
‚Mikroanalyse mit Elektronen- und Ionensonden‘, Hrsg. O. Brümmer et al.
VEB Deutscher Verlag für Grundstoffindustrie Leipzig, 1977
[A2]U. Siegel, D. Bergner, S. Däbritz, H. Baum, G. Suwalski, G. Jacobi, M. Kittler
„Anwendung der ESMA auf metallische Werkstoffe“ (Kapitel 7)
Beiträge zur 4. Tagung ‚Mikrosonde‘, 26.-28.1.1978 in Dresden
[A3]M. Kittler, G. Weidner „Schottkybarrieren-Ladungssammlungsmikroskopie an Silizium“, S. 129
Beiträge zur 5. Tagung ‚Mikrosonde‘, 22.-24.1.1981 in Leipzig
[A4]M. Kittler, W. Seifert „Zur Untersuchung der elektronischen Struktur des Siliziums in Mikrobereichen“, S. 157
Beiträge zur 6. Tagung ‚Mikrosonde‘, 18.-20.1.1984 in Dresden
[A5]M. Kittler, K.-W. Schröder, W. Seifert „Über Ergebnisse energieabhängiger EBIC-Untersuchungen“, S. 163
Beiträge zur 7. Tagung ‚Mikrosonde‘, 20.-22.1.1988 in Dresden
[A6]W. Hoppe, A. Röder, L. Benedix, M. Kittler, J. Lärz
„Spektrometerzusatz am BS 300 zur Bestimmung des Energiespektrums der Sekundärelektronen und der daraus abgeleiteten Potentialverteilung“, S. 237
Wissenschaftliche Beiträge 1988/39 der Martin-Luther-Universität Halle-Wittenberg:  Materialien zur 7. Frühjahrsschule der Arbeitsgruppe ‚Mikrosonde‘ über Mikroanalyse, Probenpräparation und -bearbeitung, 20.-25.4.1987 in Fincken
[A7]M. Kittler, W. Seifert „Präparation von Schottkykontakten auf Schrägschliffen für EBIC-Messungen an Si“, S. 35
[A8]W. Hoppe, M. Kittler „Querschnittspräparation zur Untersuchung der inneren Bauelementestruktur mittels EBIC und Potentialkontrast – Probleme der Elektronenstrahlschädigung“, S. 37

 Elektronenmikroskopie 

Veröffentlichungen zur 9. Tagung ‚Elektronenmikroskopie‘, 23.-25.1.1978 in Dresden
[A9]G, Morgenstern, M. Kittler, G. Weidner „Elektronenmikroskopische Untersuchungen von Trenn- und Läppstörschichten an nicht vollständig auspolierten Si- Scheiben“, S. 154
[A10]G. Weidner, M. Kittler „Charakterisierung von Czochralski-Silizium mit TEM und REM unter Anwendung eines Hügelätzers“, S. 155
Veröffentlichungen zur XI. Allunionskonferenz ‚Elektronenmikroskopie‘, 16.-18.10.1979 in Tallin (UdSSR)
[A11]M. Kittler „On the EBIC contrast of direct bombarded Schottky barriers caused by defects in semiconductor silicon“, S. 80
Veröffentlichungen zur 10. Tagung ‚Elektronenmikroskopie‘, 19.-21.1.1981 in Leipzig
[A12]W. Seifert, M. Kittler, G. Bloch „Zum Einfluß von Halbleiterparametern auf den EBIC-Defektkontrast“, S. 299
[A13]M. Kittler, E. Bugiel „Elektronenmikroskopische Untersuchungen von Silizium, bevorzugt an Partialversetzungen von Epitaxiestapelfehlern hinsichtlich ihrer Getterfähigkeit“, S. 394
Veröffentlichungen zur 11. Tagung ‚Elektronenmikroskopie‘, 16.-18.1.1984 in Dresden
[A14]M. Kittler, W. Seifert, E. Bugiel, K.-W. Schröder „REM/EBIC-Untersuchungen von Kristalldefekten in Silizium“, S. 72
[A15]W. Seifert, M. Kittler „Positive und negative EBIC-Defektkontraste und ihre Ursachen“, S. 90
[A16]E. Bugiel, M. Kittler, A. Borchardt „Zur Getterfähigkeit von Kristalldefekten in Silizium“, S. 239
[A17]M. Kittler, K.-W. Schröder, E. Bugiel „Quantitative EBIC-Untersuchungen an Volumenstapelfehlern in Si“, S. 241

 Mikroelektronik - Halbleitermaterialforschung

Symposium ‚Physikalische Grundlagen zu Bauelemente-Technologien der Mikroelektronik`, 26.-28.9.1979 in Frankfurt (Oder)
[A18]H. Hofmann, M. Kittler, R. Kreßner, H. Schulz „Verschleißerscheinungen am Schneidbelag von Innenloch-Diamant-trennscheiben“, S. 287
[A19]M. Kittler, A. Lindert, W. Seifert „Zur Charakterisierung von elektrisch wirksamen Inhomogenitäten in Halbleiter-Si mit dem REM durch Ladungssammlung an Schottkybarrieren – EBIC“, S. 533
II. Symposium ‚Physikalische Grundlagen zu Bauelemente-Technologien der Mikroelektronik`, 25.-27.5.1982 in Frankfurt (Oder)
[A20]F. Richter, A. Borchardt, E. Bugiel, M. Kittler, G. Weidner, H. Rausch „Zum Einfluß von Gasphasenätzung, Abscheidetemperatur undNbG-Präparation auf die Realstruktur von Si-Homoepitaxieschichten“, S. 373
[A21]W. Seifert, M. Kittler, E. Bugiel, G. Buchheim „Untersuchungen zum Einfluß von Verunreinigungsatmosphären auf die elektrische Aktivität von Defekten und zu deren Einfluß auf Bauelemente-Parameter“, S. 770
[A22]M. Kittler, W. Seifert „Zur Charakterisierung von Halbleiter-Si mit der EBIC-Methode“, S. 831
III. Symposium ‚Physikalische Grundlagen zu Bauelemente-Technologien der Mikroelektronik`,10.-12.9.1984 in Frankfurt (Oder)
[A23]M. Kittler, H. Richter, M. Krause „Elektronenstrahltestung mittels Potentialkontrast – Verfahren und Aufwand“, S. 600
[A24]L. Benedix, M. Kittler, W. Neumann, W. Seifert „Aufbau und Einsatzmöglichkeiten des Elektronenstrahldiagnosesystems ESDS 301“, S. 652
IV. Symposium ‚Physikalische Grundlagen zu Bauelemente-Technologien der Mikroelektronik`, 10.-12.9.1986 in Frankfurt (Oder)
[A25]W. Hoppe, M. Kittler, A. Röder „Möglichkeiten der nichtkonventionellen Rasterelektronenmikroskopie zur Charakterisierung des inneren Bauelementeaufbaus hinsichtlich der Dotierungsgrenzen“, S. 206
[A26]M. Kittler, W. Seifert „EBIC-Untersuchungen zur Bestimmung der Diffusionskomponente des Leckstromes in gegetterten Si-Proben“, S. 216
V. Symposium ‚Physikalische Grundlagen zu Bauelemente-Technologien der Mikroelektronik`, 7.-9.9.1988 in Frankfurt (Oder)
[A27]W. Hoppe, M. Kittler „Rekonstruktion der EBIC-Sammlungswahrscheinlichkeit zur Geometrieuntersuchung von pn-Übergängen in kleinen Strukturen“, S. 495
VI. Symposium ‚Physikalische Grundlagen zu Bauelemente-Technologien der Mikroelektronik`, 12.-14.9.1990 in Frankfurt (Oder)
[A28]W. Hoppe, M. Kittler „Geometriebestimmung an flachen pn-Übergängen mittels REM-EBIC-Technik“, S. 501
Kurzfassungen der Vorträge zur 6. Tagung ‚Physik und Elektronik‘, 14.-17.11.1977 in Berlin
[A29]G. Weidner, M. Kittler „Elektronenmikroskopische Charakterisierung von Czochralski-Si“, S. 59
Bericht 1. Tagung ‚Diagnostik von mikroelektronischen Strukturen‘, 2.-6.4.1979 in Fincken
[A30]M. Kittler „Diskussion des EBIC-Kontrastes von Defekten in Si an direkt bestrahlten Schottkykontakten in seiner Abhängigkeit von den Steuergrößen und Halbleiter-Parametern“, S. 137
3. Czekoslovenska Konferencia o Mikroeletronike, August 1983 in Bratislava (CSSR)
[A31]M. Kittler, W. Seifert, G. Buchheim „EBIC investigations of semiconductor silicon and devices“, S. 78
5. Tagung ‚Festkörperanalytik‘, 30.6.-3.7.1987 in Karl-Marx-Stadt
[A32]M. Kittler, W. Seifert, H. Richter, C. Donolato „Quantitative Bestimmung des Tiefenprofils der Minoritätsträger-Diffusionslänge in Si mit der rasterelektronenmikroskopischen EBIC-Technik“
Proceedings 1st International Autumn Meeting ‚Gettering and Defect Engineering in the Semiconductor Technology‘, 8.-18.10.1985 in Garzau (bei Berlin)
[A33]M. Kittler, W. Seifert “Investigation of gettering-related phenomena using EBIC …”, S. 269-279
Proceedings 2nd International Autumn Meeting ‚Gettering and Defect Engineering in the Semiconductor Technology‘, 11.-17.10.1987 in Garzau (bei Berlin)
[A34]M. Kittler, W. Seifert, C. Donolato “Minority-carrier diffusion-length depth distribution in intrinsically gettered Si and its influence on device performance”, S. 341-346

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