Publikationen 2017
Temperature dependence of luminescence from dislocated Ge on Si substrate
B. Schwartz, M. Reiche, M. Kittler
Materials Today: Proceedings (2017), accepted July 2017
Influence of strain, donor concentration, carrier confinement, and dislocation density on the efficiency of luminescence of Ge-based structures on Si substrate
B. Schwartz, M. Reiche, M. Kittler
Phys. Status Solidi C, 1700018 (2017)
Luminescence of strained Ge on GeSn virtual substrate grown on Si (001)
B. Schwartz, M. Oehme, R. Koerner, S. Bechler, J. Schulze, M. Kittler
Silicon Photonics XII, Proc. of SPIE Vol. 10108, 101080D-1 (2017)