Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction
Orman Gref, Ana-Maria Teodoreanu, Rainer Leihkauf, Heiko Lohrke, Martin Kittler, Daniel Amkreutz, Christian Boit, and Felice Friedrich
Physica Status Solidi A, 1–10 (2016)

Impact of Defect-Induced Strain on Device Properties
Manfred Reiche, Martin Kittler, Eckhard Pippel, Hartmut Uebensee, Hans Kosina, Alexander Grill, Zlatan Stanojevic and Oskar Baumgartner
ADVANCED ENGINEERING MATERIALS 2016

Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling
T. Wendav, I. A. Fischer, M. Virgilio, G. Capellini, F. Oliveira, M. F. Cerqueira, A. Benedetti, S. Chiussi, P. Zaumseil, B. Schwartz, K. Busch, and J. Schulze
PHYSICAL REVIEW B 94, 245304 (2016)

Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers
B. Schwartz, P. Saring, T. Arguirov, M. Oehme, K. Kostecki, E. Kasper, J. Schulze, M. Kittler
Solid State Phenomena, Vol. 242, pp. 361-367, 2016

Ge and GeSn Light Emitters on Si
M. Oehme, M. Gollhofer, K. Kostecki, R. Koerner, S. Bechler, D. Widmann, T. Arguirov, M. Kittler, J. Schulze
Solid State Phenomena, Vol. 242, pp. 353-360, 2016

The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Direct Zener Tunneling Monolithically Integrated on Si
R. Koerner, D. Schwarz, I. Fischer, L. Augel, S. Bechler, L. Haenel, M. Kern, M. Oehme, E. Rolseth, B. Schwartz, D. Weisshaupt, W. Zhang and J. Schulze
2016 IEEE International Electron Devices Meeting (IEDM), 2016, pp. 22.5.

Huge intensity gain of group-IV LEDs on Si substrate by using MQW structures
B. Schwartz, M. Reiche, M. Kittler
13th International Conference ‘Beam Injection Assessment of Microstructures in Semiconductors (BIAMS 2016), France

Temperature dependence of luminescence from dislocated Ge on Si substrate
B. Schwartz, M. Reiche, M. Kittler
18th International Conference on ‘Extended Defects in Semiconductors (EDS 2016), France

Electronic and Optical Properties of Dislocations in Silicon
M. Reiche, M. Kittler
Crystals 6(7), 74 (2016)

Electronic properties of dislocations
M. Reiche, M. Kittler, H. Uebensee, E. Pippel, A. Haehnel, S. Birner
Appl. Phys. A 122, 398 (2016)

Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction: Grain boundary light-beam induced current
Orman Gref, Ana‐Maria Teodoreanu, Rainer Leihkauf, Heiko Lohrke, Martin Kittler, Daniel Amkreutz, Christian Boit, Felice Friedrich
Physica Status Solidi (a), Vol. 213(7) July 2016