Brief description:
The fundamental objective of the project is to consolidate bilateral cooperation between the Brandenburg Technical University Cottbus-Senftenberg (Chair of Applied Physics and Semiconductor Spectroscopy) and Wroclaw University of Science and Technology (Chair of Microelectronics and Nanotechnology) and to improve skills and competences of young researchers of both cooperating teams in the field of fabrication and diagnostics of advanced structures based on semiconducting oxides, designed for sensor applications. In particular, the focus lies on the optimization of key parameters in the fabrication of innovative thin film oxide nanomaterials for resistive, electrochemical, and optical (gasochromic) sensors , designed for the detection of various gases (including nitric oxides, ammonia, methane, hydrogen) and vapours of volatile organic compounds (e.g., ethanol). A mass spread of hydrogen utilization in renewable energy technologies requires the ongoing development of sensors and detectors to enable the safe and sustainable hydrogen use, transport, and storage. In this sense, several metal oxides (e.g., CeO_x, SnO_x, In₂O₃, VO₃, WO_x, etc.) exhibit a strong chemical reactivity towards reducible gases (e.g., H₂ and hydrocarbons), concomitant with a significant change in materials properties such as electrical conductivity. The reducibility of these oxides can be selectively modified by alloying them with additional elements, which allows the targeting of parameters such as sensitivity, selectivity, and cross-sensitivity for specific gases and making these materials promising candidates for its use as active layers in chemical sensors. Moreover, the combination of rare-earth and transition metal oxides with different principles such as doping and use of multilayers or colored surfaces, has become an exciting route toward achieving relatively low operating temperatures (<100 °C) for metal oxide-based sensors.

Cooperation Partner:

• Chair of Microelectronics and Nanotechnology
  Wrocław University of Science and Technology
  Prof. DSc. PhD. Eng. Jarosław Domaradzki

Project manager:
Prof. Dr. rer. nat. habil. Jan Ingo Flege

Project assistance:
Dr. Małgorzata Kot

Duration:
01.01.2023 - 31.12.2024

Project number:
57656558

Brief description
Within the framework of this project, the infrastructural requirements for the »ES&EW« laboratory are being created.

Cooperation Partner:

• Chair of Thermal Energy Technology
  Brandenburg University of Technology
  Prof. Dr. rer. nat. Lars Röntzsch
  Siemens-Halske-Ring 13
  03046 Cottbus

• Chair of Ccombustion Engines and Flight Propulsion
  Brandenburg University of Technology
  Prof. Dr.-Ing. Heinz Peter Berg
  Siemens-Halske-Ring 14
  03046 Cottbus

• Chair of Thermodynamics/Thermal Process Engineering
  Brandenburg University of Technology
  Prof. Dr.-Ing. Fabian Mauß
  Siemens-Halske-Ring 8
  03046 Cottbus

Project manager:
Prof. Dr. rer. nat. habil. Jan Ingo Flege
Fabian Rachow

Duration:
29.09.2022 – 30.06.2026

Index of advancement:
85056897

Further information:

• »ES&EW« Lab
• EIZ homepage

Brief description (only in German)
Im »ES&EW«-Labor sollen die drei Ebenen für Sektor-gekoppelte Energiesysteme – Wärme, Strom und Mobilität – in einem CO₂ neutralen Kreislaufansatz, basierend auf Wasserstoff, abgebildet werden.
Auf allen Ebenen werden dafür die entsprechenden Elemente des Kreislaufansatzes entwickelt und optimiert, beginnend mit der Wasserstoffproduktion in unterschiedlichen Druckstufen und Verfahrenstechniken entsprechend des gewünschten Einsatzes (Hochdruck → Mobilität, Niederdruck → weitere Synthese).
Darauf aufbauend geht es um die Weiterverarbeitung des Wasserstoffs zu den synthetischen Kohlenwasserstoffen Methan und Methanol, sowie deren Rückverstromung im Oxyfuel-Prozess für eine emissionsfreie Rückführung der Abgase, in Form von hochkonzentriertem und reinem CO₂, in den Stoffkreislauf.
Dabei wird jede der drei Ebenen in einem verständnisbasierten und simulationsgestützten Entwicklungsprozess im engen Austausch mit den EIZ-Einrichtungen EECON, DIVERSY, Scale-Up Lab, MoWes und SCL, für den Einsatz im Kreislaufsystem optimiert und weiterentwickelt.

In dem neu aufzubauenden »ES&EW«-Labor wird mit fortschrittlicher Messtechnik eine detaillierte Charakterisierung der Materialien, Komponenten und Prozessführung sowie die Optimierung ihres Zusammenspiels angestrebt.
Dazu wird aufbauend auf detaillierten experimentellen Analysen eine neuartige modellbasierte Simulations- und Optimierungsplattform entwickelt, die eine umfangreiche Prototypenvalidierung im frühen Entwicklungszeitraum ermöglicht.

Cooperation Partner:

• Chair of Thermal Energy Technology
  Brandenburg University of Technology
  Prof. Dr. rer. nat. Lars Röntzsch
  Siemens-Halske-Ring 13
  03046 Cottbus

• Chair of Ccombustion Engines and Flight Propulsion
  Brandenburg University of Technology
  Prof. Dr.-Ing. Heinz Peter Berg
  Siemens-Halske-Ring 14
  03046 Cottbus

• Chair of Thermodynamics/Thermal Process Engineering
  Brandenburg University of Technology
  Prof. Dr.-Ing. Fabian Mauß
  Siemens-Halske-Ring 8
  03046 Cottbus

Project manager:
Prof. Dr. rer. nat. habil. Jan Ingo Flege
Fabian Rachow

Duration:
01.08.2022 – 31.07.2026

Index of advancement:
03SF0693A

Further information:

• EIZ homepage
• Press release and interview with Prof. Schiffer in »Niederlausitz aktuell« (13.10.2022)
• Handover of funding notification (Press release, 12.10.2022)

About the Graduate School

Details of the PhD Topic

Brief description
In the context of the energy transition, Lusatia as a traditional energy region is structurally changing from a coal-mining region to a model region for the hydrogen strategy, with (carbon) hydrocarbons (synthetic fuels) as important energy carriers of the future for stationary and mobile applications. This creates an enormous demand for powerful sensors for safety-related monitoring during transport and storage of the fluid fuels as well as their use by the end customer.
The goal of this subproject is a combined sensor array based on the merging of two technologies (IHP, IPMS) for the future synchronous detection of hydrogen and hydrocarbons, which is self-calibrating and can be coupled to existing sensor networks.
To this end, the sensor concepts for resistive and optical silicon-based sensors developed in the first phase of iCampµs will initially be consolidated in the second phase through design and material optimization steps. In parallel, the technological approaches for the realization of matrix arrangements will first be created, which in perspective will form the basis on the one hand for the connection of several sensors (e.g. electronic noses) and on the other hand for intelligent signal processing. Subsequently, the two sensor principles are to be merged into a CMOS-compatible platform, including a digital interface with generic functionality. In the process, a configurable multi-purpose platform for signal and data processing with the ability to interface to standard wired and wireless industrial networks and to a 5G standard platform will be developed.

Cooperation Partner:

• Chair of Experimental Physics and functional Materials
  Brandenburg University of Technology Cottbus - Senftenberg
  Prof. Dr. rer. nat. habil. Inga Fischer
  Erich-Weinert-Straße 1
  03046 Cottbus

• Chair of Micro and nano systems
  Brandenburg University of Technology Cottbus - Senftenberg
  Prof. Dr.-Ing. Dr. rer. nat. habil. Harald Schenk
  Konrad-Zuse-Straße 1
  D-03046 Cottbus

• IHP GmbH – Leibniz Institut für innovative Mikroelektronik
  Prof. Dr. rer. nat. habil. Christian Wenger
  Im Technologiepark 25
  15236 Frankfurt (Oder)

• Fraunhofer Institute for Photonic Microsystems (IPMS)
  Institute section »Integrated Silicon Systems«
  Dr. Sebastian Meyer
  Konrad-Zuse-Straße 1
  03046 Cottbus

• Chair of Computer Engineering
  Brandenburg University of Technology Cottbus - Senftenberg
  Prof. Dr.-Ing. Michael Hübner
  (Dr.-Ing. Marc Reichenbach, Substitute Professor)
  Konrad-Wachsmann-Allee 5
  03046 Cottbus

Project manager:
Prof. Dr. rer. nat. habil. Jan Ingo Flege

Duration:
01.01.2022 – 31.12.2026

Index of advancement:
16ME0420K

Further information:

• iCampus hompage
• Kick-Off Meeting iCampμs Cottbus Phase II (Stream)
  (Copyright: loewn|logulago GmbH)

Brief description
The overall objective of the project is to further develop an atomic layer deposition (ALD) process of high quality ultrathin alumina films for their low temperature (~80°C) deposition on large area organic-inorganic perovskite layers. The synthesis and deposition of the perovskite layers will also be developed within the project. The ALD process on perovskite layers will primarily be applied for passivation layers in perovskite solar cells (PSCs), but it is also highly relevant for other optoelectronic devices and e.g. sensors and batteries. PSCs have experienced an immense increase in efficiency within a very short time, but their low long-term stability is the main obstacle to market introduction. To increase the long-term stability, an ultra-thin ALD passivation layer is used, which is produced at low process temperatures and in a very controlled manner preventing the thermally sensitive perovskite layers from degradation and ensuring the necessary transport of the charge carriers generated by the photoelectric conversion through the passivation layer to the electrode.

MOVPE growth and characterization of (Al_xGa_1-x)₂O₃ thin films for high power devices

Brief description:
Beta-type gallium oxide (β-Ga₂O₃) provides promising perspectives for high-power applications outperforming current key technology because for β-Ga₂O₃ a considerably stronger electrical breakdown field is predicted. In addition, it offers potentially low cost and large substrate size preparation from bulk crystals with controllable n-type doping in comparison to other promising materials. The performance of high-power devices directly depends on the breakdown field to the power of three as well as on the mobility of the charge carriers. The incorporation of aluminum into β-Ga₂O₃ allows tuning the band gap and consequently the breakdown field. Therefore, a suitable material growth method is required resulting in high-quality binary oxide thin films with optimized band gap and uncompromised materials properties.
Hence, in this project we propose to develop a novel approach based on metal-organic vapor phase epitaxy (MOVPE) of β-(Al_xGa_1-x)₂O₃ (AlGaO) thin films on lattice-matched (100)-oriented β-Ga₂O₃ enabling the growth at temperatures above 800°C with an enhanced solubility of aluminum in β-Ga₂O₃. For this purpose, we will initially grow bulk aluminum-doped β-Ga₂O₃ single crystals exhibiting a minimal lattice mismatch with the targeted AlGaO films. Subsequently, the quasi-homoepitaxial growth of high-quality AlGaO thin films on these substrates by MOVPE will be engineered and optimized thanks to the detailed insights from sophisticated materials characterization. Our concerted, systematic use of atomic force, electron, and photoemission microscopy, in situ x-ray and electron diffraction, spectroscopic ellipsometry as well as photoelectron spectroscopy techniques will facilitate to unravel the growth mode, morphology, composition as well as the structural, electronic, electrical, and optical properties of the AlGaO thin films.
Specifically, we will determine the limiting factors for Al distribution and its maximally possible incorporation into β-Ga₂O₃ without phase separation. Then, we will explore the possibilities for band gap and strain engineering in the AlGaO system, investigate the surface morphology as well as the interface of the AlGaO on β-Ga₂O₃ system, and perform electrical and structural analysis to understand the process of defect formation and the role of impurities.
Our strategy is threefold: (1) preparation of epitaxy-ready aluminum-doped (up to 15%) bulk β-Ga₂O₃ crystals (2 cm to 2 inches in diameter) as substrates for the subsequent quasi-homoepitaxial growth of AlGaO thin layers and characterization of the obtained films to (2) optimize the growth and to (3) evaluate the application-relevant properties. Particularly, the project focuses on the preparation and characterization of epitaxial AlGaO with maximum aluminum incorporation resulting in the highest possible increase of the band gap and the breakdown field.

Cooperation Partner:

• Dr. Andreas Popp and Dr. Zbigniew Galazka
  Leibniz-Institut für Kristallzüchtung (IKZ)
  Abteilung Schichten und Nanostrukturen
  Max-Born-Straße 2
  12489 Berlin

• Dr. Vedran Vonk
  Deutsches Elektronen-Synchrotron (DESY) Standort Hamburg DESY
  Research Group X-ray Physics and Nanoscience
  DESY Nanolaboratory
  Notkestr. 85
  D-22607 Hamburg

Project manager:
Prof. Dr. rer. nat. habil. Jan Ingo Flege

Duration:
01.01.2023-31.12.2025

Index of advancement:
FL 548/13-1

Project number:
491040331 (GEPRIS)