Verzeichnis der Publikationen, Prof. Dr. Inga Anita Fischer

Publikationen bis Juli 2018

1. “Integrated collinear refractive index sensor with Ge PIN photodiodes”, L. Augel, Y. Kawaguchi, S. Bechler, R. Körner, J. Schulze, H. Uchida, and I. A. Fischer, ACS Photonics 5 (11), 4586-4593 (2018)

2. “Electrical characterisation of n-doped SiGeSn diodes with high Sn content”, C. J. Clausen, I. A. Fischer, D. Weißhaupt, M. Oehme, F. Bärwolf, B. Tillack, G. Colston, M. Myronov und J. Schulze,Semicond. Sci. Technol. 33 (12), 124017 (2018). 

3. “SiGeSn material for integrated optical devices”,M. Oehme, D. Schwarz, C. J. Clausen, I. A. Fischer, J. Schulze Proceedings Volume 10686, Silicon Photonics: From Fundamental Research to Manufacturing; 106860C (2018); doi:10.1117/12.2318011

4. "Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates," F. Berkmann, L. Augel, M. B. Schilling, A. Berrier, D. Schwarz, D. Weißhaupt, M. Oehme, J. Schulze, I. A. Fischer, 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Opatija, 2018, pp. 0032-0035; doi: 10.23919/MIPRO.2018.8400006

5. "Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001)", L. A. Hänel, Y. Elogail, D. Schwarz, I. A. Fischer and J. Schulze, 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Opatija, 2018, pp. 0027-0031; doi: 10.23919/MIPRO.2018.8400005

6. "Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing", Y. Kawaguchi, L. Augel, H. Uchida, M. Inoue, J. Schulze and I. A. Fischer, 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Opatija, 2018, pp. 0023-0026;doi: 10.23919/MIPRO.2018.8400004

7. "Tunnel Injection into Group IV Semiconductors and its Application to Light-Emitting Devices", C. J. Clausen, I. A. Fischer, N. Hoppe, R. Koerner, M. Oehme, D. Schwarz, J. Schulze,2018 IEEE Photonics Society Summer Topical Meeting Series (SUM), Waikoloa, HI, 2018, pp. 29-30; doi: 10.1109/PHOSST.2018.8456688

8. "FDTD simulation of enhanced Faraday effect in plasmonic composite structures with rectangularly arranged Au particles.", J. Schlipf, Y. Itabashi, T. Goto, H. Takagi, P. B. Lim, Y. Nakamura, I. A. Fischer, J. Schulze, H. Uchida, M. Inoue,2018 IEEE International Magnetic Conference (INTERMAG), Singapore, Singapore, 2018, pp. 1-2; doi: 10.1109/INTMAG.2018.8508694

9. "Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and Ge/SixGe1−x−ySny heterostructure model for low power FET applications", Y. Elogail, I. A. Fischer, T. Wendav und J. Schulze,Semicond. Sci. Technol. 33 (11), 114001 (2018).

10. “Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si (111)”,S. Bechler, M. Kern, H. S. Funk, G. Colston, I. A. Fischer, D. Weißhaupt, M. Myronov, J. van Slageren und J. Schulze, Semicond. Sci. Technol. 33 (9), 095008 (2018).

11. “Ex situ n+ doping of GeSn alloys via non-equilibrium processing”, S. Prucnal, Y. Berencén, M. Wang, L. Rebohle, R. Böttger, I. A. Fischer, L. Augel, M. Oehme, J. Schulze, M. Voelskow, M. Helm, W. Skorupa, S. Zhou,Semicond. Sci. Technol. 33 (6), 065008 (2018).

12. “Engineering of Germanium Tunnel Junctions for Optical Applications”,R. Koerner, I. A. Fischer, D. Schwarz, C. J. Clausen, N. Hoppe und J. Schulze, IEEE Photonics Journal 10 (2), 1-12 (2018).

13. “An Integrated Plasmonic Refractive Index Sensor: Al nanohole arrays on Ge PIN photodiodes”, L Augel, S. Bechler, R. Körner, M. Oehme, J. Schulze, and I. A. Fischer, 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 2017, pp. 40.5.1-40.5.4; doi: 10.1109/IEDM.2017.8268528

14. “Tunnel-Modulated Ge LED/Laser Light Source and a Sub-Thermal Voltage Switching Detector for the Monolithic On-Chip Optical Transceiver “, R. Koerner, I. A. Fischer, R. Soref , D. Schwarz, C. J. Clausen, L. Hänel, M. Oehme und J. Schulze,2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 2017, pp. 24.4.1-24.4.4; doi: 10.1109/IEDM.2017.8268453

15. “Optofluidic sensor system with Ge PIN photodetector for CMOS-compatible sensing”, L. Augel, F. Berkmann, D. Latta, I. A. Fischer, S. Bechler, Y. Elogail, K. Kostecki, K. Potje-Kamloth, und J. Schulze,Microfluidics and Nanofluidics 21 (11), 169 (2017)

16. “Optical Critical Points of SixGe1-x-ySny alloys with high Si content",I. A. Fischer, A. Berrier, F. Hornung, M. Oehme, P. Zaumseil, G. Capellini, N. von den Driesch, D. Buca und J. Schulze,Semicond. Sci. Technol. 32 (12), 124004 (2017).

17. “MBE Grown Germanium Tunnel-Junctions–Burstein-Moss Effect and Band-Edge Luminescence in the Ge Zener-Emitter”, R. Koerner, I. A. Fischer, C. J. Clausen, M. Oehme, J. Schulze, Semicond. Sci. Technol. 32 (12), 124005 (2017).

18. “(Si) GeSn plasmonics”, I. A. Fischer, L. Augel, A. Berrier, M. Oehme und J. Schulze, 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), San Juan, 2017, pp. 15-16; doi: 10.1109/PHOSST.2017.8012628 

19. “Ge PIN Photodetectors with Nanohole Arrays for Refractive Index Sensing”, L. Augel, S. Bechler, R. Körner, J. Schulze, und I. A. Fischer, 2017 IEEE 14th International Conference on Group IV Photonics (GFP), Berlin, 2017, pp. 161-162; doi: 10.1109/GROUP4.2017.8082246

20. “Zener Tunnel-Injection for Ge Optical Amplifiers, Lasers and Modulators (invited)”, R. Koerner, I. A. Fischer, M. Oehme, C. Clausen und J. Schulze, 2017 IEEE 14th International Conference on Group IV Photonics (GFP), Berlin, 2017, pp. 11-12; doi: 10.1109/GROUP4.2017.8082171 

21. “Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges”,E. G. Rolseth, A. Blech, I. A Fischer, Y. Hashad, R. Koerner, K. Kostecki, A. Kruglov, VS Senthil Srinivasan, M. Weiser, T. Wendav, K. Busch und J. Schulze, 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Opatija, 2017, pp. 57-65; doi: 10.23919/MIPRO.2017.7973391

22. “Growth of Patterned GeSn and GePb Alloys by Pulsed Laser Induced Epitaxy”,J. Schlipf, J. L. Frieiro, I. A. Fischer, C. Serra, J. Schulze, S. Chiussi, 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), Opatija, 2017, pp. 37-42; doi: 10.23919/MIPRO.2017.7973387

23. “Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling”, T. Wendav, I. A. Fischer, M. Virgilio, G. Capellini, F. Oliveira, M. F. Cerqueira, A. Benedetti, S. Chiussi, P. Zaumseil, B. Schwartz, K. Busch, and J. Schulze, Physical Review B 94 (24), 245304 (2016).

24. “The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Direct Zener Tunneling Monolithically Integrated on Si”, R. Koerner, D. Schwarz, I. A. Fischer, L. Augel, S. Bechler, L. Haenel, M. Kern, M. Oehme, E. Rolseth, B. Schwartz, D. Weisshaupt, W. Zhang, und J. Schulze, 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 2016, pp. 22.5.1-22.5.4; doi: 10.1109/IEDM.2016.7838474

25. “Ellipsometric investigation of doped Ge0.95Sn0.05 films in the mid infrared range for plasmonic applications”, L. Augel, I. A. Fischer, F. Hornung, M. Dressel, A. Berrier, M. Oehme und J. Schulze, Optics Letters 41 (18), 4398 (2016).

26. “The Zener-Emitter: Electron injection by direct-tunneling in Ge LEDs for the on-chip Si light source”, R. Koerner, M. Oehme, K. Kostecki, I. A. Fischer, E. Rolseth, S. Bechler, M. Yorgidis, A. Blech, O. Latzl und J. Schulze, 74th Annual Device Research Conference (DRC), 2016; doi: 10.1109/DRC.2016.7548478 (2016). 

27. "Electrical detection of spin transport in Si two-dimensional electron gas systems“, L.-T. Chang, I. A. Fischer, J. Tang, C.-Y. Wang, G. Yu, Y. Fan, K. Murata, T. Nie, M. Oehme, J. Schulze, and K. Wang, Nanotechnology 27, 365701 (2016). 

28. "Contact resistivities of antimony-doped n type Ge1-xSnx”,V. S. S. Srinivasan, I. A. Fischer, L. Augel, A. Hornung, R. Koerner, K. Kostecki, M. Oehme, E. Rolseth, and J. Schulze, Semicond. Sci. Technol. 31, 08LT01 (2016).

29. “Compositional dependence of the direct band gap of Ge1-x-ySixSny alloys”,T. Wendav, I. A. Fischer, M. Montanari, M. H. Zoellner, W. Klesse, G. Capellini, N. von den Driesch, M. Oehme, D. Buca, T. Schroeder, K. Busch und J. Schulze,Appl. Phys. Lett. 108 (24), 242104 (2016).

30. “(Si)GeSn Nanostructures for Optoelectronic Device Applications”,I. A. Fischer, F. Oliveira, A. Benedetti, S. Chiussi und J. Schulze, Proceedings of  the 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2016; doi: 10.1109/MIPRO.2016.7522099. 

31. "Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors", L. Augel, I. A. Fischer, L. A. Dunbar, S. Bechler, A. Berrier, D. Etezadi, F. Hornung, K. Kostecki, C. I. Ozdemir, M. Soler, H. Altug und J. Schulze, Proc. SPIE 9724, Plasmonics in Biology and Medicine XIII 2016, 97240M (2016); doi:10.1117/12.2212650. 

32. “Ge-on-Si PIN-photodetectors with Al nanoantennas: The effect of antenna size on light scattering into waveguide modes”, I. A. Fischer, L. Augel, T. Kropp, S. Jitpakdeebodin, N. Franz, F. Oliveira, E. Rolseth, T. Maß, T. Taubner und J. Schulze,Appl. Phys. Lett. 108, 71108 (2016).

33. “Fabrication of GeSn-MQWs by Overgrowth of Sn on Ge by using Molecular Beam Epitaxy”, F. Oliveira, I. A. Fischer, A. Benedetti, P. Zaumseil, M. F. Cerqueira, M. I. Vasilevskiy, S. Stefanov, S. Chiussi und J. Schulze, Appl. Phys. Lett. 107, 262102 (2015).

34. "Growth and Characterization of SiGeSn Quantum Well Photodiodes", I. A. Fischer, T. Wendav, L. Augel, S. Jitpakdeebodin, F. Oliveira, A. Benedetti, S. Stefanov, S. Chiussi, G. Capellini, K. Busch und J. Schulze, Opt. Express 23, 25048-25057 (2015).

35. “Electroluminescence of GeSn/Ge MQW LEDs on Si substrate”, B. Schwartz, M. Oehme, K. Kostecki, D. Widmann, M. Gollhofer, R. Koerner, S. Bechler, I. A. Fischer, T. Wendav, E. Kasper, J. Schulze und M. Kittler,Optics Letters 40, 3209-3212 (2015).

36. "Plasmonics-integrated Ge-PIN-Photodetectors: Efficiency Enhancement by Al Nanoantennas and Plasmon Detection”, I. A. Fischer, L. Augel, S. Jitpakdeebodin, N. Franz, S. Fleischer und J. Schulze,Proc. SPIE 9654, International Conference on Optics and Photonics 2015, 965404 (2015); doi:10.1117/12.2192161. 

37. "Vertical Ge and GeSn Heterojunction Gate-All-Around Tunneling Field Effect Transistors", J. Schulze, A. Blech, A. Datta, I. A. Fischer, D. Hähnel, S. Naasz, E. Rolseth und E.-M. Tropper, Solid State Electron. 110, 59 (2015).

38. "Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis",F. Oliveira, I. A. Fischer, S. Stefanov, A. Benedetti, F. Cerqueira, S. Ferdov, M. Vasilevskiy, S. Chiussi und J. Schulze,J. Appl. Phys. 117, 125706 (2015).

39. "Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si",I. A. Fischer, L.-T. Chang, C. Sürgers, E. Rolseth, S. Reiter, S. Stefanov, S. Chiussi, J. Tang, K. L. Wang und J. Schulze, Appl. Phys. Lett. 105, 222408 (2014).

40. "Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel and Sn Content", D. Hähnel, I. A. Fischer, A. Hornung, A.-C. Köllner und J. Schulze, IEEE Trans. Electron Dev. 62, 36 (2014).

41. "Spin accumulation in n-Ge on Si with sputtered Mn5Ge3C0.8-contacts"I. A. Fischer, L.-T. Chang, C. Sürgers, S. Chiussi, K. L. Wang und J. Schulze, International Silicon-Germanium Technology and Device Meeting (ISTDM) 2014, 113-114 (2014); doi:10.1109/ISTDM.2014.6874647.

42. "Vertical Ge heterojunction gate-all-around Tunneling Field Effect Transistors with Ge0.92Sn0.08-Layers at the tunneling junction",J. Schulze, A. Blech, I. A. Fischer, D. Hahnel, S. Naasz und E. M. Tropper, International Silicon-Germanium Technology and Device Meeting (ISTDM) 2014, 165–166 (2014); doi: 10.1109/ISTDM.2014.6874652

43. "Plasmonic waveguiding and detection structures integrated with Ge PIN-diodes",I. A. Fischer, L. Augel, D. Ray und J. Schulze, International Silicon-Germanium Technology and Device Meeting (ISTDM) 2014, 115–116 (2014); doi: 10.1109/ISTDM.2014.6874648

44. "Mn5Ge3C0.8 Contacts for Spin Injection into Ge",I. A. Fischer, C. Sürgers, M. Petit, V. Le Thanh und J. Schulze, ECS Trans. 58, 29 (2013). 

45. "Ferromagnetic Mn5Ge3C0.8 contacts on Ge: work function and specific contact resistivity", I. A. Fischer, J. Gebauer, E. Rolseth, P. Winkel, L.-T. Chang, K. L. Wang, C. Sürgers und J. Schulze, Semicond. Sci. Technol. 28, 125002 (2013).

46. "Comparison of spin lifetimes in n-Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements",L.-T. Chang, W. Han, Y. Zhou, J. Tang, I. A. Fischer, M. Oehme, J. Schulze, R.K. Kawakami und K.L. Wang, Semicond. Sci. Technol. 28, 1, 015018 (2013). 

47. "Silicon Tunneling Field-Effect Transistors With Tunneling in Line With the Gate Field", I. A. Fischer, A.S.M. Bakibillah, M. Golve, D. Hähnel, H. Isemann, A. Kottantharayil, M. Oehme und J. Schulze, IEEE Electron Device Letters, 34, 2, 154-156 (2013). 

48. "Si Tunneling Field Effect Transistor with Tunnelling In-Line with the Gate Field",I. A. Fischer, D. Hahnel, H. Isemann, A. Kottantharayil, G. Murali, M. Oehme und J. Schulze,, International Silicon-Germanium Technology and Device Meeting (ISTDM) 2012, 1–2 (2012); doi: 10.1109/ISTDM.2012.6222411.

49. "CMOS-Compatible Plasmon Propagation and Detection in Vertical Si and Ge p-i-n Diodes“,I. A. Fischer, M. Eßlinger, R. Vogelgesang, J.-L. Wu and J. Schulze, International Silicon-Germanium Technology and Device Meeting (ISTDM) 2012, 1–2 (2012); doi: 10.1109/ISTDM.2012.6222415

50. "Recent developments in Ge dots grown on pit-patterned surfaces", A. Karmous, I. A. Fischer, O. Kirfel, J. Mattes, M. Oehme, J. Werner und J. Schulze,Phys. Status Solidi B 249, 764 (2012).

51. "Towards electrical detection of plasmons in all-silicon pin-diodes", I. A. Fischer, J.-L. Wu, R. Vogelgesang und J. Schulze, Phys. Status Solidi B 249, 773 (2012).

52. "Electrical spin injection and transport in germanium", Y. Zhou, W. Han, L.-T. Chang, F. Xiu, M. Wang, M. Oehme, I. A. Fischer, J. Schulze, R.K. Kawakami und K.L. Wang, Phys. Rev. B 84, 125323 (2011).

53. "Germanium vertical Tunneling Field-Effect Transistor", D. Hähnel, M. Oehme, M. Sarlija, A. Karmous, M. Schmid, J. Werner, O. Kirfel, I. Fischer und J. Schulze, Solid State Electron. 62, 132 (2011).

54. "Crystalline phases in chiral ferromagnets: Destabilization of helical order",I. Fischer, N. Shah und A. Rosch, Phys. Rev. B 77, 024415 (2008).

55. "Field-tuned quantum critical point of Antiferromagnetic metals", I. Fischer und A. Rosch, Phys. Rev. B 71, 184429 (2005).

56. "Weak spin-orbit interactions induce exponentially flat mini-bands in magnetic metals without inversion symmetry", I. Fischer und A. Rosch, Europhys. Lett. 68, 93 (2004).

57. "Restoration of supersymmetric Slavnov-Taylor and Ward identities in the presence of soft and spontaneous symmetry breaking", I. Fischer, W. Hollik, M. Roth und D. Stöckinger, Phys. Rev. D 69,  015004 (2004).

Buchkapitel

1.  “Molecular Beam Epitaxy Growth of SiGeSn Alloys”, I. A. Fischer, M. Oehme und J. Schulze, in “Molecular Beam Epitaxy: From Research to Mass Production”, Second Edition, edited by Mohamed Henini, pp. 55-71, Elsevier (2018)