Einladung zum Physikalischen Kolloquium
Termin: Dienstag, 21. Januar 2020
Zeit: 15.30 Uhr
Ort: Hauptgebäude, HG 0.20
"Tailoring of surface morphology and interface structure during semiconductor growth by surface and interface passivation"
Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, D-28339 Bremen
This talk will report on growth studies of a wide variety of semiconductor systems, ranging from germanium-silicon epitaxy, over wide band gap semiconductors, like cadmium selenide and gallium oxide, to organic thin films, like PTCDA, and two-dimensional materials. Surfactants, i.e. additional surface and interface adsorbates have been investigated for their versatile impact on growth and surface morphology modification.
The experiments have been performed using high resolution low-energy electron diffraction (SPA-LEED), x-ray photoelectron emission spectroscopy (XPS), scanning tunneling microscopy (STM), low-energy electron microscopy (LEEM) and synchrotron radiation spectroscopy (XSW, XPEEM, NEXAFS). These techniques will be introduced and elaborated.
Alle Interessenten sind sehr herzlich eingeladen!
gez. Prof. Seibold