in-situ ALD cluster
System for atomic layer deposition (ALD) with integrated
- in-situ photoelectron spectroscopy (XPS)
- operando spectroscopic ellipsomtry (SI)
- operando quadrupol mass spectrometry (QMS)
in-situ ALD system (Foto: Karsten Henkel)
Load-lock chamber and spectrsocopic ellipsometer (Foto: Karsten Henkel)
Spectrsocopic ellipsometer and QMS (Foto: Karsten Henkel)
XPS measurement (Foto: Karsten Henkel)
ALD valves (Foto: Karsten Henkel)
ALD valve (Foto: Karsten Henkel)
Gas mixing (Foto: Karsten Henkel)
Gas supply (Foto: Karsten Henkel)
ALD Reactor
- UHV compatible stainless steel chamber
- Heatable sample holder (up to 1000°C) with SiN heater
- 3 axis linear manipulator with θ rotation
- Pump- or flow-type mode of ALD
- Gas mixing and supply:
- VCR-based
- 3 main lines contrpolled via mass flow controllers (Bronkhorst)
- 3 precursor lines (for high, medium, and low vapor pressure)
- 3 oxidant/reactant lines (H2O, O3/O2...)
- 1 purge line (N2)
- Lines heatable up to 120°C
- Pneumatic ALD valves
- Ozon generator (Oxidation Technologies)
- Control software: Lab-View
XPS (in-situ)
- Load-lock chamber with sample storage
- Preparation chamber (thermal or gas traetment before and after the ALD growth)
- Gas analysis via mass spectrometry (MKS)
- Additional deposition by thermal or e-beam evaporation
- Analysis chamber
- Al/Mg twin anode (non-chromatized)
- Hemispherical electron analyzer: Omicron EA125
- Detector: 5 channeltron
SI (operando)
- Spectroscopic ellipsometer SER 801 (SENTECH Instruments GmbH)
- 240 nm to 1000 nm (UV-VIS)
- Installed at 70° to the sample surface normal
- Protection of viewports by pneumatic valves to avoid undesired depositions
- Software: SpectraRay/4
QMS (operando)
- Quadrupol mass spectrometer HAL/3F 301 RC (Hiden Analytical)
- Adaption at ALD reactor via blind flange with an aperture (⌀=500mm) and differential pump station