Surf. Sci. Cluster

Foto: Karsten Henkel

Sample preparation (cleaning)
- Preparation chamber and load-lock
- Ion sputtering with reactive (Oxygen) und non-reactive (Argon) gases
- Annealing at elevated temperatures
  - E-beam heating up to 1200 °C
  - Direct current up to bis 12 A

Material deposition
- 2 Preparation chambers
- Molecular beam epitaxy
  - Sub-monolayer deposition
  - Multilayer thin film growth
- E-beam evaporator for metal deposition
- Chemical vapor deposition (CVD) at high pressure
- Temperature: liquid Nitrogen up to high temperature
- in-situ transfer to the analysis chambers

Photoelectron spectroscopy
- Electron analyzer system
  - Phoibos 150 SAL (scanning lens)
  - 2D-CCD-Detector
- XR50 dual anode X-ray source
  - X-ray photoelectron spectroscopy (XPS)
  - Monochromatized Al Kα (1486,7 eV) and Ag Lα (2986,4 eV)
- UVS 300
  - Ultraviolet photoelectron spectroscopy (UPS)
  - Angle-resolved photoemission spectroscopy (ARPES)
  - Monochromatized He I (21.2 eV) and He II (40.8 eV)
- 5-axis manipulator
  - ±70° polar angle rotation
  - Cooling via liquid Nitrogen or liquid Helium
  - E-beam annealing

Low-Energy ElectronDiffraction (LEED)
- ErLEED 150 Optics
Scanning Probe Microscopy (SPM)
- SPM: Aarhus 150 HT
- Scanning Tunneling Microscopy (STM)
  - Measuring modes:constant height (CH), constant current (CC)
- Atomic Force Microscopy (AFM)
  - Non-contact (nc)
  - Kelvin Probe Force Microscopy (KPFM)
  - Measuring modes: contant height (CH), constant force (CF)
- Spectroscopy: I(V), I(z), dI/dV, Δf(V), Δf(z)
- Temperature: 150 up to 1000 K

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