BTU auf einen Blick
Fakultät 1
Fachgebiet Angewandte Physik/Sensorik Prof. Dr. rer. nat. habil. Dieter Schmeißer

Veröffentlichungen 2006

  • 06_25
    Formation of Pedestal Oxynitride Layer by Extremely Shallow Nitrogen Implantation in Planar R.F. Plasma Reactor
    T. Bieniek, R. Beck, A. Jakubowski, P. Hoffmann, D. Schmeißer, P. Konarski, M. Cwil
    Meeting Abstracts-Electrochemical Society MA2005-02(13) (2006) 531
    Online
  • 06_24
    Formation of Pedestal Oxynitride Layer by Extremely Shallow Nitrogen Implantation in Planar R.F. Plasma Reactor
    T. Bieniek, R. Beck, A. Jakubowski, P. Hoffmann, D. Schmeißer, P. Konarski, M. Cwil
    ECS Transactions 1/5 (2006) 407-417, ISSN 1938-5862
    Online (DOI), ISSN 1938-6737
  • 06_23
    Nano-scaled Dielectric Barriers (NanoDieB) for CMOS compatible Si-technologies
    D. Schmeißer, G. Seibold, J. Reif
    Forum der Forschung 19 (2006) 131-136, ISSN 0947-6989
    Online (pdf)
  • 06_22
    Al-oxynitrides as a buffer layer for Pr2O3/SiC interfaces
    R. Sohal, M. Torche, K. Henkel, P. Hoffmann, M. Tallarida, D. Schmeißer
    Materials Science in Semiconductor Processing 9/6 (2006) 945-948
    Online (DOI)
  • 06_21
    Silicate formation at the interface of Hf-oxide as a high-k dielectric and Si(001) surfaces
    D. Schmeißer, E. Zschech
    Materials Science in Semiconductor Processing 9/6 (2006) 934-939
    Online (DOI)
  • 06_20
    Resonant photoemission at the Oxygen K edge as a tool to study the eletronic properties of defects at SiO2/Si and SiO2/SiC interfaces
    M. Tallarida, R. Sohal, D. Schmeißer
    Superlattices and Microstructures 40/4-6 (2006) 393-398
    Online (DOI)
  • 06_19
    X-ray absorption and photoemission spectroscopy of 3C- and 4H-SiC
    M. Tallarida, D. Schmeißer, F. Zheng, F. J. Himpsel
    Surface Science 600 (2006) 3879-3883
    Online (DOI)
  • 06_18
    Praseodymium silicate films on Si(100) for gate dielectric applications: physical and electrical characterization
    G. Lupina, T. Schroeder, J. Dabrowski, C. Wenger, A.U. Mane, H.-J. Müssig, P. Hoffmann, D. Schmeißer
    Journal of Applied Physics 99/11 (2006) 114109
    Online (DOI)
  • 06_17
    Metallic Single-Crystal CoSi Nanowires via Chemical Vapor Deposition of Single-Source Precursor
    A. L. Schmitt, L. Zhu, D. Schmeißer, F.J. Himpsel, S. Jin
    Journal of Physical Chemistry B 110/37 (2006) 18142-18146
    Online (DOI)
  • 06_16
    Synthesis and Properties of Single-Crystal FeSi Nanowires
    A.L. Schmitt, M.J. Bierman, D. Schmeißer, F.J. Himpsel, S. Jin
    Nano Letters 6/8 (2006) 1617-1621
    Online (DOI)
  • 06_15
    Noise-induced spatiotemporal patterns in a bistable reaction-diffusion system: Photoelectron emission micrsoscopy experiments and modeling of the CO oxidation reaction on Ir(111)
    P. Hoffmann, S. Wehner, D. Schmeißer, H.R. Brand, J. Küppers
    Physical Review E 73 (2006) 056123
    Online (DOI)
  • 06_14
    Chemical Bonding, Permittivity and Elastic Properties in Locally Modified Organosilicate Glass
    E. Zschech, H. Stegmann, P. Hoffmann, D. Schmeißer, P. Potapov, H.-J. Engelmann, D. Chumakov, H. Geisler
    Materials Research Society Symposium Proceedings 914 (2006) F11-03
    Online (DOI)
  • 06_13
    Silicate Formation at the Interface of high-k dielectrics and Si(001) Surfaces
    D. Schmeißer, F. Zheng, F. Himpsel, H.-J. Engelmann, E. Zschech
    Materials Research Society Symposium Proceedings 917 (2006) E10-02
    Online (DOI)
  • 06_12
    Characterization of Chemical Bonding in Low-K Dielectric Materials for Interconnect Isolation: A XAS and EELS Study
    P. Hoffmann, D. Schmeißer, F. Himpsel, H.-J. Engelmann, E. Zschech, H. Stegmann, J.D. Denlinger
    Materials Research Society Symposium Proceedings 914 (2006) F01-08
    Online (DOI)
  • 06_11
    Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces
    K. Henkel, M. Torche, R. Sohal, C. Schwiertz, P. Hoffmann, D. Schmeißer
    Materials Research Society Symposium Proceedings 911 (2006) B10-11
    In: M. Dudley, M.A. Capano, T. Kimoto, A.R. Powell, S. Wang (Eds): "Silicon Carbide 2006-Materials, Processing and Devices", S. 353-358, ISBN: 978-1-55899-867-4
    Online (DOI)
  • 06_10
    Electron spectroscopy and microscopy on chromium oxide nanowires on templated block copolymers
    O. Seifarth, D. Schmeißer, R. Krenek, A. Sydorenko, M. Stamm
    Progress in Solid State Chemistry 34 (2006) 111-119
    Online (DOI)
  • 06_09
    Microstructure and optical properties of TiO2 thin films prepared by low pressure hot target reactive magnetron sputtering
    J. Domaradzki, D. Kaczmarek, E.L. Prociow, A. Borkowska, D. Schmeisser, G. Beuckert
    Thin Solid Films 513 (2006) 269-274
    Online (DOI)
  • 06_08
    Organic thin film transistors with polymer high-k dielectric insulator
    K. Müller, I. Paloumpa, K. Henkel, D. Schmeißer
    Materials Science and Engineering C 26 (2006) 1028-1031
    Online (DOI)
  • 06_07
    The interaction of Al, Ag, Au and Ti to Pr2O3 thin film dielectrics
    M. Torche, K. Henkel, D. Schmeißer
    Materials Science and Engineering C 26 (2006) 1127-1130
    Online (DOI)
  • 06_06
    Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces
    D. Schmeißer, F. Zheng, V. Perez-Dieste, F. J. Himpsel, R. LoNigro, R. G. Toro, G. Malandrino, I. L. Fragalà
    Materials Science and Engineering C 26 (2006) 1122-1126
    Online (DOI)
  • 06_05
    Characterization of Nanocrystalline TiO2-HfO2 thin films prepared by low pressure hot target reactive magnetron sputtering
    J. Domaradzki, D. Kaczmarek, E. L. Prociow, A. Borkowska, R. Kudrawiec, J. Misiewicz, D. Schmeißer, G. Beuckert
    Surface and Coatings Technology 200 (2006) 6283-6287
    Online (DOI)
  • 06_04
    The consequences of anisotropic diffusion and noise: PEEM at the CO oxidation reaction on stepped Ir(111) surfaces
    S. Wehner, P. Hoffmann, D. Schmeißer, H. R. Brand, Jürgen Küppers
    Chemical Physics Letters 423/1-3 (2006) 39-44
    Online (DOI)
  • 06_03
    Chemical Bonding in Low-k Dielectric Materials for Interconnect Isolation: Characterization using XAS and EELS
    D. Schmeißer, P. Hoffmann, F. Zheng, F. Himpsel, H. Stegmann, E. Zschech
    AIP Conference Proceedings 817 (2006) 117-124, ISBN 0-7354-0310-4
    Online (DOI)
  • 06_02
    Improvement of nitrogen incorporation into oxynitrides on 4H-SiC(0001)
    P. Hoffmann, D. Schmeißer
    Nuclear Instruments and Methods in Physics Research B 246/1 (2006) 85-89
    Online (DOI)
  • 06_01
    Photo-emission-electron-microscopy for characterization of an operating organic electronic device
    K. Müller, Y. Burkov, D. Schmeißer
    Thin Solid Films 495 (2006) 219-223
    Online (DOI)